TY - GEN
T1 - High performance InGaN/GaN dot-in-a-wire light emitting diodes on Si(111)
AU - Mi, Z.
AU - Nguyen, H. P.T.
AU - Zhang, S.
AU - Cui, K.
AU - Han, X.
PY - 2011
Y1 - 2011
N2 - We report on the epitaxial growth, fabrication, and characterization of full-color InGaN/GaN dot-in-a-wire nanoscale LEDs on Si(111), which can exhibit an internal quantum efficiency of ∼ 45% and negligible saturation up to ∼ 300 A/cm2.
AB - We report on the epitaxial growth, fabrication, and characterization of full-color InGaN/GaN dot-in-a-wire nanoscale LEDs on Si(111), which can exhibit an internal quantum efficiency of ∼ 45% and negligible saturation up to ∼ 300 A/cm2.
UR - http://www.scopus.com/inward/record.url?scp=79953711467&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79953711467&partnerID=8YFLogxK
U2 - 10.1109/PHOTWTM.2011.5730039
DO - 10.1109/PHOTWTM.2011.5730039
M3 - Conference contribution
AN - SCOPUS:79953711467
SN - 9781424484287
T3 - 2011 IEEE Winter Topicals, WTM 2011
SP - 47
EP - 48
BT - 2011 IEEE Winter Topicals, WTM 2011
T2 - 2011 Winter Topical Meetings, WTM 2011
Y2 - 10 January 2011 through 12 January 2011
ER -