High performance InGaN/GaN dot-in-a-wire light emitting diodes on Si(111)

Z. Mi, H. P.T. Nguyen, S. Zhang, K. Cui, X. Han

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report on the epitaxial growth, fabrication, and characterization of full-color InGaN/GaN dot-in-a-wire nanoscale LEDs on Si(111), which can exhibit an internal quantum efficiency of ∼ 45% and negligible saturation up to ∼ 300 A/cm2.

Original languageEnglish (US)
Title of host publication2011 IEEE Winter Topicals, WTM 2011
Pages47-48
Number of pages2
DOIs
StatePublished - Apr 11 2011
Externally publishedYes
Event2011 Winter Topical Meetings, WTM 2011 - Keystone, CO, United States
Duration: Jan 10 2011Jan 12 2011

Publication series

Name2011 IEEE Winter Topicals, WTM 2011

Other

Other2011 Winter Topical Meetings, WTM 2011
CountryUnited States
CityKeystone, CO
Period1/10/111/12/11

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

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