High performance InGaN/GaN dot-in-a-wire light emitting diodes on Si(111)

Z. Mi; H. P.T. Nguyen; S. Zhang; K. Cui; X. Han

doi:10.1109/PHOTWTM.2011.5730039

High performance InGaN/GaN dot-in-a-wire light emitting diodes on Si(111)

Z. Mi
, H. P.T. Nguyen
, S. Zhang
, K. Cui
, X. Han

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report on the epitaxial growth, fabrication, and characterization of full-color InGaN/GaN dot-in-a-wire nanoscale LEDs on Si(111), which can exhibit an internal quantum efficiency of ∼ 45% and negligible saturation up to ∼ 300 A/cm².

Original language	English (US)
Title of host publication	2011 IEEE Winter Topicals, WTM 2011
Pages	47-48
Number of pages	2
DOIs	https://doi.org/10.1109/PHOTWTM.2011.5730039
State	Published - 2011
Externally published	Yes
Event	2011 Winter Topical Meetings, WTM 2011 - Keystone, CO, United States Duration: Jan 10 2011 → Jan 12 2011

Publication series

Name	2011 IEEE Winter Topicals, WTM 2011

Other

Other	2011 Winter Topical Meetings, WTM 2011
Country/Territory	United States
City	Keystone, CO
Period	1/10/11 → 1/12/11

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics

Access to Document

10.1109/PHOTWTM.2011.5730039

Cite this

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title = "High performance InGaN/GaN dot-in-a-wire light emitting diodes on Si(111)",

abstract = "We report on the epitaxial growth, fabrication, and characterization of full-color InGaN/GaN dot-in-a-wire nanoscale LEDs on Si(111), which can exhibit an internal quantum efficiency of ∼ 45\% and negligible saturation up to ∼ 300 A/cm2.",

author = "Z. Mi and Nguyen, \{H. P.T.\} and S. Zhang and K. Cui and X. Han",

year = "2011",

doi = "10.1109/PHOTWTM.2011.5730039",

language = "English (US)",

isbn = "9781424484287",

series = "2011 IEEE Winter Topicals, WTM 2011",

pages = "47--48",

booktitle = "2011 IEEE Winter Topicals, WTM 2011",

note = "2011 Winter Topical Meetings, WTM 2011 ; Conference date: 10-01-2011 Through 12-01-2011",

}

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T1 - High performance InGaN/GaN dot-in-a-wire light emitting diodes on Si(111)

AU - Mi, Z.

AU - Nguyen, H. P.T.

AU - Zhang, S.

AU - Cui, K.

AU - Han, X.

PY - 2011

Y1 - 2011

N2 - We report on the epitaxial growth, fabrication, and characterization of full-color InGaN/GaN dot-in-a-wire nanoscale LEDs on Si(111), which can exhibit an internal quantum efficiency of ∼ 45% and negligible saturation up to ∼ 300 A/cm2.

AB - We report on the epitaxial growth, fabrication, and characterization of full-color InGaN/GaN dot-in-a-wire nanoscale LEDs on Si(111), which can exhibit an internal quantum efficiency of ∼ 45% and negligible saturation up to ∼ 300 A/cm2.

UR - https://www.scopus.com/pages/publications/79953711467

UR - https://www.scopus.com/pages/publications/79953711467#tab=citedBy

U2 - 10.1109/PHOTWTM.2011.5730039

DO - 10.1109/PHOTWTM.2011.5730039

M3 - Conference contribution

AN - SCOPUS:79953711467

SN - 9781424484287

T3 - 2011 IEEE Winter Topicals, WTM 2011

SP - 47

EP - 48

BT - 2011 IEEE Winter Topicals, WTM 2011

T2 - 2011 Winter Topical Meetings, WTM 2011

Y2 - 10 January 2011 through 12 January 2011

ER -

High performance InGaN/GaN dot-in-a-wire light emitting diodes on Si(111)

Abstract

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Other

All Science Journal Classification (ASJC) codes

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