We have identified that the extremely low carrier injection efficiency in nanowire light emitting diodes is mainly due to the severe carrier loss through nonradiative surface recombination. Such a bottleneck can be effectively addressed by utilizing an in situ grown AlGaN shell surrounding the InGaN/GaN dot-in-a-wire LED structures, leading to significantly enhanced carrier injection efficiency and output power. Moreover, the quality of white-light emission from such core-shell nanowire LEDs including the color temperature and color rendering index can also be massively improved by further optimizing the device structure for example the size and the In compositions of the InGaN dots in a single epitaxial growth step.
|Original language||English (US)|
|Number of pages||7|
|State||Published - 2014|
|Event||International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 4 - 225th ECS Meeting - Orlando, United States|
Duration: May 11 2014 → May 15 2014
All Science Journal Classification (ASJC) codes