High rate photochemical deposition of amorphous silicon from higher silanes

A. E. Delahoy

doi:10.1016/0022-3093(85)90789-6

High rate photochemical deposition of amorphous silicon from higher silanes

A. E. Delahoy

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The deposition rate of hydrogenated amorphous silicon prepared by mercury-sensitized photo-CVD of silanes has been increased through the use of perfluorinated window coatings and small window-substrate separations. Observations regarding the deposition rate and its time dependence are qualitatively explained by a model involving two surfaces with greatly different sticking coefficients for the deposition precursors. The films are characterized by band gap, conductivity, IR absorption, photoluminescence, ESR, and diffusion length measurements.

Original language	English (US)
Pages (from-to)	833-836
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	77-78
Issue number	PART 2
DOIs	https://doi.org/10.1016/0022-3093(85)90789-6
State	Published - Dec 2 1985
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

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10.1016/0022-3093(85)90789-6

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AB - The deposition rate of hydrogenated amorphous silicon prepared by mercury-sensitized photo-CVD of silanes has been increased through the use of perfluorinated window coatings and small window-substrate separations. Observations regarding the deposition rate and its time dependence are qualitatively explained by a model involving two surfaces with greatly different sticking coefficients for the deposition precursors. The films are characterized by band gap, conductivity, IR absorption, photoluminescence, ESR, and diffusion length measurements.

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High rate photochemical deposition of amorphous silicon from higher silanes

Abstract

All Science Journal Classification (ASJC) codes

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