High spatial resolution mapping of porous silicon

E. Ettedgui, C. Peng, L. Tsybeskov, Y. Gao, P. M. Fauchet, G. E. Carver, H. A. Mizes

Research output: Chapter in Book/Report/Conference proceedingConference contribution

19 Scopus citations

Abstract

Porous silicon (PSI) samples with high photoluminescence (PL) efficiency were examined using microscopic mapping techniques including scanning electron microscopy (SEM) and spatially resolved photoluminescence (SRPL). Studies of the growth conditions indicate that the homogeneity of the PL and the surface roughness of the sample depend on the preparation procedure of the PSI layer. SEM and spatially-resolved reflectance scans of an n-type sample with a PSI layer on the order of 100 μm reveal a highly fractured surface. SRPL of the same sample shows non uniform PL on a scale of 5 μm. Cross-sectional analysis of the samples with SRPL and SEM reveals the intricate multilayer structure of the PSI film. The top portion of the PSI film is largely responsible for the PL and is composed of isolated column-like structures. We have also observed cross-shaped structures reminiscent of stress fractures on the surface of PSI films using SEM or optical microscopy. Furthermore, atomic force microscopy (AFM) and SEM measurements of the surface of PSI films of intermediate thickness reveal that samples which appear smooth on approximately 1 μm scale are actually covered with clumped structures on the order of 100 to 150 nm.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
PublisherPubl by Materials Research Society
Pages173-178
Number of pages6
ISBN (Print)1558991786
StatePublished - Jan 1 1993
Externally publishedYes
EventProceedings of the Second Symposium on Dynamics in Small Confining Systems - Boston, MA, USA
Duration: Nov 30 1992Dec 4 1992

Publication series

NameMaterials Research Society Symposium Proceedings
Volume283
ISSN (Print)0272-9172

Other

OtherProceedings of the Second Symposium on Dynamics in Small Confining Systems
CityBoston, MA, USA
Period11/30/9212/4/92

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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