The search for ferromagnetism above room temperature in semiconductors doped with paramagnetic ions has intensified in recent years because of the potential of combining magnetic information storage and electronic switching in one spintronic device. Here we report an observation of ferromagnetism well above room temperature in gallium phosphide doped with Cu2+ detected by ferromagnetic resonance and SQUID magnetometry. Other important features of the results in this p -type Cu-doped GaP are the high Curie temperature above 700 K significantly higher than previous observations, the relatively simple low-temperature bulk sintering process used to synthesize the material, which will significantly reduce the cost of large-scale production, and the use of copper as the dopant rather than manganese, which precludes ferromagnetic clusters or magnetic alloy impurities as the origin of the ferromagnetism. Ab initio calculations also show the existence of ferromagnetism in Cu-doped GaP. When the spin-orbit coupling is included, the total moment is enhanced and we get a total magnetic moment of 0.31 μB with a local moment on Cu 0.082 and on P 0.204 μB.
|Original language||English (US)|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - Dec 1 2006|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics