Highly efficient, spectrally pure 340 nm ultraviolet emission from Al xGa1-xN nanowire based light emitting diodes

Q. Wang, A. T. Connie, H. P.T. Nguyen, M. G. Kibria, S. Zhao, S. Sharif, I. Shih, Z. Mi

Research output: Contribution to journalArticlepeer-review

60 Scopus citations

Abstract

High crystal quality, vertically aligned AlxGa1-xN nanowire based double heterojunction light emitting diodes (LEDs) are grown on Si substrate by molecular beam epitaxy. Such AlxGa1-xN nanowires exhibit unique core-shell structures, which can significantly suppress surface nonradiative recombination. We successfully demonstrate highly efficient Al xGa1-xN nanowire array based LEDs operating at ∼340 nm. Such nanowire devices exhibit superior electrical and optical performance, including an internal quantum efficiency of ∼59% at room temperature, a relatively small series resistance, highly stable emission characteristics, and the absence of efficiency droop under pulsed biasing conditions.

Original languageEnglish (US)
Article number345201
JournalNanotechnology
Volume24
Issue number34
DOIs
StatePublished - Aug 30 2013
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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