Hot luminescence and electron-phonon interaction in structures with quantum wells

D. N. Mirlin; B. P. Zakharchenya; I. I. Reshina; A. V. Rodina; V. F. Sapega; A. A. Sirenko; V. M. Ustinov; A. E. Zhukov; A. Yu Egorov

Hot luminescence and electron-phonon interaction in structures with quantum wells

D. N. Mirlin, B. P. Zakharchenya, I. I. Reshina, A. V. Rodina, V. F. Sapega, A. A. Sirenko, V. M. Ustinov, A. E. Zhukov, A. Yu Egorov

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The electron-phonon interaction in structures with GaAs/AlAs and GaAs/Al_x Ga_1-xAs quantum wells was investigated experimentally by the hot-photoluminescence method. The rate of intraband scattering of 200-meV hot electrons by phonons was measured as a function of the quantum-well widths in the range 40-140 Å. The energy and the type of phonons that make the main contribution to the energy relaxation process is determined directly from the energy losses in the hot-luminescence spectrum. The results are compared for structures with different barrier compositions. The rates of electron scattering by different types of phonons are calculated on the basis of a continuum dielectric model. The experimental results agree satisfactorily with these calculations.

Original language	English (US)
Pages (from-to)	377-380
Number of pages	4
Journal	Semiconductors
Volume	30
Issue number	4
State	Published - Apr 1996
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

Cite this

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title = "Hot luminescence and electron-phonon interaction in structures with quantum wells",

abstract = "The electron-phonon interaction in structures with GaAs/AlAs and GaAs/Alx Ga1-xAs quantum wells was investigated experimentally by the hot-photoluminescence method. The rate of intraband scattering of 200-meV hot electrons by phonons was measured as a function of the quantum-well widths in the range 40-140 {\AA}. The energy and the type of phonons that make the main contribution to the energy relaxation process is determined directly from the energy losses in the hot-luminescence spectrum. The results are compared for structures with different barrier compositions. The rates of electron scattering by different types of phonons are calculated on the basis of a continuum dielectric model. The experimental results agree satisfactorily with these calculations.",

author = "Mirlin, {D. N.} and Zakharchenya, {B. P.} and Reshina, {I. I.} and Rodina, {A. V.} and Sapega, {V. F.} and Sirenko, {A. A.} and Ustinov, {V. M.} and Zhukov, {A. E.} and Egorov, {A. Yu}",

year = "1996",

month = apr,

language = "English (US)",

volume = "30",

pages = "377--380",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "Maik Nauka-Interperiodica Publishing",

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TY - JOUR

T1 - Hot luminescence and electron-phonon interaction in structures with quantum wells

AU - Mirlin, D. N.

AU - Zakharchenya, B. P.

AU - Reshina, I. I.

AU - Rodina, A. V.

AU - Sapega, V. F.

AU - Sirenko, A. A.

AU - Ustinov, V. M.

AU - Zhukov, A. E.

AU - Egorov, A. Yu

PY - 1996/4

Y1 - 1996/4

N2 - The electron-phonon interaction in structures with GaAs/AlAs and GaAs/Alx Ga1-xAs quantum wells was investigated experimentally by the hot-photoluminescence method. The rate of intraband scattering of 200-meV hot electrons by phonons was measured as a function of the quantum-well widths in the range 40-140 Å. The energy and the type of phonons that make the main contribution to the energy relaxation process is determined directly from the energy losses in the hot-luminescence spectrum. The results are compared for structures with different barrier compositions. The rates of electron scattering by different types of phonons are calculated on the basis of a continuum dielectric model. The experimental results agree satisfactorily with these calculations.

AB - The electron-phonon interaction in structures with GaAs/AlAs and GaAs/Alx Ga1-xAs quantum wells was investigated experimentally by the hot-photoluminescence method. The rate of intraband scattering of 200-meV hot electrons by phonons was measured as a function of the quantum-well widths in the range 40-140 Å. The energy and the type of phonons that make the main contribution to the energy relaxation process is determined directly from the energy losses in the hot-luminescence spectrum. The results are compared for structures with different barrier compositions. The rates of electron scattering by different types of phonons are calculated on the basis of a continuum dielectric model. The experimental results agree satisfactorily with these calculations.

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M3 - Article

AN - SCOPUS:0040203966

SN - 1063-7826

VL - 30

SP - 377

EP - 380

JO - Semiconductors

JF - Semiconductors

IS - 4

ER -

Hot luminescence and electron-phonon interaction in structures with quantum wells

Abstract

All Science Journal Classification (ASJC) codes

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