Hot luminescence and electron-phonon interaction in structures with quantum wells

D. N. Mirlin, B. P. Zakharchenya, I. I. Reshina, A. V. Rodina, V. F. Sapega, A. A. Sirenko, V. M. Ustinov, A. E. Zhukov, A. Yu Egorov

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Abstract

The electron-phonon interaction in structures with GaAs/AlAs and GaAs/Alx Ga1-xAs quantum wells was investigated experimentally by the hot-photoluminescence method. The rate of intraband scattering of 200-meV hot electrons by phonons was measured as a function of the quantum-well widths in the range 40-140 Å. The energy and the type of phonons that make the main contribution to the energy relaxation process is determined directly from the energy losses in the hot-luminescence spectrum. The results are compared for structures with different barrier compositions. The rates of electron scattering by different types of phonons are calculated on the basis of a continuum dielectric model. The experimental results agree satisfactorily with these calculations.

Original languageEnglish (US)
Pages (from-to)377-380
Number of pages4
JournalSemiconductors
Volume30
Issue number4
StatePublished - Apr 1 1996
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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