The electron-phonon interaction in structures with GaAs/AlAs and GaAs/Alx Ga1-xAs quantum wells was investigated experimentally by the hot-photoluminescence method. The rate of intraband scattering of 200-meV hot electrons by phonons was measured as a function of the quantum-well widths in the range 40-140 Å. The energy and the type of phonons that make the main contribution to the energy relaxation process is determined directly from the energy losses in the hot-luminescence spectrum. The results are compared for structures with different barrier compositions. The rates of electron scattering by different types of phonons are calculated on the basis of a continuum dielectric model. The experimental results agree satisfactorily with these calculations.
|Original language||English (US)|
|Number of pages||4|
|State||Published - Apr 1996|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics