Hot luminescence and electron-phonon interaction in structures with quantum wells

D. N. Mirlin; B. P. Zakharchenya; I. I. Reshina; A. V. Rodina; V. F. Sapega; A. A. Sirenko; V. M. Ustinov; A. E. Zhukov; A. Yu Egorov

Hot luminescence and electron-phonon interaction in structures with quantum wells

D. N. Mirlin
, B. P. Zakharchenya
, I. I. Reshina
, A. V. Rodina
, V. F. Sapega
, A. A. Sirenko
, V. M. Ustinov
, A. E. Zhukov
, A. Yu Egorov

Research output: Contribution to journal › Article › peer-review

Abstract

The electron-phonon interaction in structures with GaAs/AlAs and GaAs/Al_x Ga_1-xAs quantum wells was investigated experimentally by the hot-photoluminescence method. The rate of intraband scattering of 200-meV hot electrons by phonons was measured as a function of the quantum-well widths in the range 40-140 Å. The energy and the type of phonons that make the main contribution to the energy relaxation process is determined directly from the energy losses in the hot-luminescence spectrum. The results are compared for structures with different barrier compositions. The rates of electron scattering by different types of phonons are calculated on the basis of a continuum dielectric model. The experimental results agree satisfactorily with these calculations.

Original language	English (US)
Pages (from-to)	377-380
Number of pages	4
Journal	Semiconductors
Volume	30
Issue number	4
State	Published - Apr 1996
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

Cite this

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title = "Hot luminescence and electron-phonon interaction in structures with quantum wells",

abstract = "The electron-phonon interaction in structures with GaAs/AlAs and GaAs/Alx Ga1-xAs quantum wells was investigated experimentally by the hot-photoluminescence method. The rate of intraband scattering of 200-meV hot electrons by phonons was measured as a function of the quantum-well widths in the range 40-140 {\AA}. The energy and the type of phonons that make the main contribution to the energy relaxation process is determined directly from the energy losses in the hot-luminescence spectrum. The results are compared for structures with different barrier compositions. The rates of electron scattering by different types of phonons are calculated on the basis of a continuum dielectric model. The experimental results agree satisfactorily with these calculations.",

author = "Mirlin, \{D. N.\} and Zakharchenya, \{B. P.\} and Reshina, \{I. I.\} and Rodina, \{A. V.\} and Sapega, \{V. F.\} and Sirenko, \{A. A.\} and Ustinov, \{V. M.\} and Zhukov, \{A. E.\} and Egorov, \{A. Yu\}",

year = "1996",

month = apr,

language = "English (US)",

volume = "30",

pages = "377--380",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "Pleiades Publishing",

number = "4",

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TY - JOUR

T1 - Hot luminescence and electron-phonon interaction in structures with quantum wells

AU - Mirlin, D. N.

AU - Zakharchenya, B. P.

AU - Reshina, I. I.

AU - Rodina, A. V.

AU - Sapega, V. F.

AU - Sirenko, A. A.

AU - Ustinov, V. M.

AU - Zhukov, A. E.

AU - Egorov, A. Yu

PY - 1996/4

Y1 - 1996/4

N2 - The electron-phonon interaction in structures with GaAs/AlAs and GaAs/Alx Ga1-xAs quantum wells was investigated experimentally by the hot-photoluminescence method. The rate of intraband scattering of 200-meV hot electrons by phonons was measured as a function of the quantum-well widths in the range 40-140 Å. The energy and the type of phonons that make the main contribution to the energy relaxation process is determined directly from the energy losses in the hot-luminescence spectrum. The results are compared for structures with different barrier compositions. The rates of electron scattering by different types of phonons are calculated on the basis of a continuum dielectric model. The experimental results agree satisfactorily with these calculations.

AB - The electron-phonon interaction in structures with GaAs/AlAs and GaAs/Alx Ga1-xAs quantum wells was investigated experimentally by the hot-photoluminescence method. The rate of intraband scattering of 200-meV hot electrons by phonons was measured as a function of the quantum-well widths in the range 40-140 Å. The energy and the type of phonons that make the main contribution to the energy relaxation process is determined directly from the energy losses in the hot-luminescence spectrum. The results are compared for structures with different barrier compositions. The rates of electron scattering by different types of phonons are calculated on the basis of a continuum dielectric model. The experimental results agree satisfactorily with these calculations.

UR - https://www.scopus.com/pages/publications/0040203966

UR - https://www.scopus.com/pages/publications/0040203966#tab=citedBy

M3 - Article

AN - SCOPUS:0040203966

SN - 1063-7826

VL - 30

SP - 377

EP - 380

JO - Semiconductors

JF - Semiconductors

IS - 4

ER -

Hot luminescence and electron-phonon interaction in structures with quantum wells

Abstract

All Science Journal Classification (ASJC) codes

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