Hybrid a-Si/nc-Si solar cells fabricated on a directly-deposited, textured, zinc oxide transparent conductor

Alan E. Delahoy; Tongyu Liu; Gaurav Saraf; Anamika Patel; John Cambridge; Sheyu Guo; Paola Delli Veneri; Lucia V. Mercaldo; Iurie Usatii

doi:10.1117/12.827085

Hybrid a-Si/nc-Si solar cells fabricated on a directly-deposited, textured, zinc oxide transparent conductor

Alan E. Delahoy, Tongyu Liu, Gaurav Saraf, Anamika Patel, John Cambridge, Sheyu Guo, Paola Delli Veneri, Lucia V. Mercaldo, Iurie Usatii

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This paper reports the development of a VHF PECVD process at 40.68 MHz for deposition of device-grade nc-Si:H. It further reports the evaluation of textured ZnO:Al films produced by hollow cathode sputtering as regards their suitability to serve as a TCO substrate for a-Si:H/nc-Si:H tandem device fabrication. The tandem devices were produced using an established VHF PECVD process at 100 MHz. Both VHF processes are capable of producing similar nc-Si:H material based on their analysis using micro-Raman spectroscopy. For the tandem junction devices, a peak in device efficiency was obtained at a Raman crystalline fraction of 50-52 % and a microstructure parameter of 0.60-0.68. A best tandem cell efficiency of 9.9% was achieved on HC ZnO compared to 11.3% on a reference Type-U SnO2 substrate.

Original language	English (US)
Title of host publication	Thin Film Solar Technology
DOIs	https://doi.org/10.1117/12.827085
State	Published - 2009
Externally published	Yes
Event	Thin Film Solar Technology - San Diego, CA, United States Duration: Aug 2 2009 → Aug 4 2009

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	7409
ISSN (Print)	0277-786X

Other

Other	Thin Film Solar Technology
Country/Territory	United States
City	San Diego, CA
Period	8/2/09 → 8/4/09

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Keywords

Nanocrystalline si
Nc-Si:H
TCO
Tandem junction
Textured
Thin-film solar cells
ZnO

Access to Document

10.1117/12.827085

Cite this

Delahoy, A. E., Liu, T., Saraf, G., Patel, A., Cambridge, J., Guo, S., Veneri, P. D., Mercaldo, L. V., & Usatii, I. (2009). Hybrid a-Si/nc-Si solar cells fabricated on a directly-deposited, textured, zinc oxide transparent conductor. In Thin Film Solar Technology Article 74090G (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7409). https://doi.org/10.1117/12.827085

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title = "Hybrid a-Si/nc-Si solar cells fabricated on a directly-deposited, textured, zinc oxide transparent conductor",

abstract = "This paper reports the development of a VHF PECVD process at 40.68 MHz for deposition of device-grade nc-Si:H. It further reports the evaluation of textured ZnO:Al films produced by hollow cathode sputtering as regards their suitability to serve as a TCO substrate for a-Si:H/nc-Si:H tandem device fabrication. The tandem devices were produced using an established VHF PECVD process at 100 MHz. Both VHF processes are capable of producing similar nc-Si:H material based on their analysis using micro-Raman spectroscopy. For the tandem junction devices, a peak in device efficiency was obtained at a Raman crystalline fraction of 50-52 % and a microstructure parameter of 0.60-0.68. A best tandem cell efficiency of 9.9% was achieved on HC ZnO compared to 11.3% on a reference Type-U SnO2 substrate.",

keywords = "Nanocrystalline si, Nc-Si:H, TCO, Tandem junction, Textured, Thin-film solar cells, ZnO",

author = "Delahoy, {Alan E.} and Tongyu Liu and Gaurav Saraf and Anamika Patel and John Cambridge and Sheyu Guo and Veneri, {Paola Delli} and Mercaldo, {Lucia V.} and Iurie Usatii",

year = "2009",

doi = "10.1117/12.827085",

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series = "Proceedings of SPIE - The International Society for Optical Engineering",

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Delahoy, AE, Liu, T, Saraf, G, Patel, A, Cambridge, J, Guo, S, Veneri, PD, Mercaldo, LV & Usatii, I 2009, Hybrid a-Si/nc-Si solar cells fabricated on a directly-deposited, textured, zinc oxide transparent conductor. in Thin Film Solar Technology., 74090G, Proceedings of SPIE - The International Society for Optical Engineering, vol. 7409, Thin Film Solar Technology, San Diego, CA, United States, 8/2/09. https://doi.org/10.1117/12.827085

Hybrid a-Si/nc-Si solar cells fabricated on a directly-deposited, textured, zinc oxide transparent conductor. / Delahoy, Alan E.; Liu, Tongyu; Saraf, Gaurav et al.
Thin Film Solar Technology. 2009. 74090G (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7409).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Delahoy, Alan E.

AU - Liu, Tongyu

AU - Saraf, Gaurav

AU - Patel, Anamika

AU - Cambridge, John

AU - Guo, Sheyu

AU - Veneri, Paola Delli

AU - Mercaldo, Lucia V.

AU - Usatii, Iurie

PY - 2009

Y1 - 2009

N2 - This paper reports the development of a VHF PECVD process at 40.68 MHz for deposition of device-grade nc-Si:H. It further reports the evaluation of textured ZnO:Al films produced by hollow cathode sputtering as regards their suitability to serve as a TCO substrate for a-Si:H/nc-Si:H tandem device fabrication. The tandem devices were produced using an established VHF PECVD process at 100 MHz. Both VHF processes are capable of producing similar nc-Si:H material based on their analysis using micro-Raman spectroscopy. For the tandem junction devices, a peak in device efficiency was obtained at a Raman crystalline fraction of 50-52 % and a microstructure parameter of 0.60-0.68. A best tandem cell efficiency of 9.9% was achieved on HC ZnO compared to 11.3% on a reference Type-U SnO2 substrate.

AB - This paper reports the development of a VHF PECVD process at 40.68 MHz for deposition of device-grade nc-Si:H. It further reports the evaluation of textured ZnO:Al films produced by hollow cathode sputtering as regards their suitability to serve as a TCO substrate for a-Si:H/nc-Si:H tandem device fabrication. The tandem devices were produced using an established VHF PECVD process at 100 MHz. Both VHF processes are capable of producing similar nc-Si:H material based on their analysis using micro-Raman spectroscopy. For the tandem junction devices, a peak in device efficiency was obtained at a Raman crystalline fraction of 50-52 % and a microstructure parameter of 0.60-0.68. A best tandem cell efficiency of 9.9% was achieved on HC ZnO compared to 11.3% on a reference Type-U SnO2 substrate.

KW - Nanocrystalline si

KW - Nc-Si:H

KW - TCO

KW - Tandem junction

KW - Textured

KW - Thin-film solar cells

KW - ZnO

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BT - Thin Film Solar Technology

T2 - Thin Film Solar Technology

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ER -

Hybrid a-Si/nc-Si solar cells fabricated on a directly-deposited, textured, zinc oxide transparent conductor

Abstract

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All Science Journal Classification (ASJC) codes

Keywords

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