Hybrid a-Si/nc-Si solar cells fabricated on a directly-deposited, textured, zinc oxide transparent conductor

Alan E. Delahoy, Tongyu Liu, Gaurav Saraf, Anamika Patel, John Cambridge, Sheyu Guo, Paola Delli Veneri, Lucia V. Mercaldo, Iurie Usatii

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper reports the development of a VHF PECVD process at 40.68 MHz for deposition of device-grade nc-Si:H. It further reports the evaluation of textured ZnO:Al films produced by hollow cathode sputtering as regards their suitability to serve as a TCO substrate for a-Si:H/nc-Si:H tandem device fabrication. The tandem devices were produced using an established VHF PECVD process at 100 MHz. Both VHF processes are capable of producing similar nc-Si:H material based on their analysis using micro-Raman spectroscopy. For the tandem junction devices, a peak in device efficiency was obtained at a Raman crystalline fraction of 50-52 % and a microstructure parameter of 0.60-0.68. A best tandem cell efficiency of 9.9% was achieved on HC ZnO compared to 11.3% on a reference Type-U SnO2 substrate.

Original languageEnglish (US)
Title of host publicationThin Film Solar Technology
DOIs
StatePublished - 2009
EventThin Film Solar Technology - San Diego, CA, United States
Duration: Aug 2 2009Aug 4 2009

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7409
ISSN (Print)0277-786X

Other

OtherThin Film Solar Technology
CountryUnited States
CitySan Diego, CA
Period8/2/098/4/09

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Keywords

  • Nanocrystalline si
  • Nc-Si:H
  • TCO
  • Tandem junction
  • Textured
  • Thin-film solar cells
  • ZnO

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