Hybrid Magneto-electric FET-CMOS Integrated Memory Design for Instant-on Computing

Keyphrases

• In-memory Computing 100%
• Memory Design 100%
• Magnetoelectric 100%
• CMOS Integrated 100%
• Integrated Memories 100%
• Instantons 100%
• Energy Consumption 66%
• Proposed Architecture 66%
• Non-volatile Memory 66%
• Electric Field Effect 66%
• Field-effect Transistors 66%
• Magnetoelectric Fields 66%
• Energy Efficient 33%
• High Energy 33%
• Internet of Things Devices 33%
• High Performance 33%
• Non-volatile 33%
• Neural Network 33%
• Circuitry 33%
• Proposed Design 33%
• High-speed Switching 33%
• Design Features 33%
• Binary Neural Network 33%
• Post-CMOS 33%
• Normally-off 33%
• Power Usage 33%
• Power Constraint 33%
• Memory Operations 33%
• Binary Content-addressable Memory 33%
• Overall Energy Consumption 33%
• Non-volatility 33%
• Architecture Evaluation 33%
• Write Energy 33%
• VGG16 33%
• Minimal Power 33%
• AlexNet 33%
• Edge Applications 33%
• Write Operation 33%
• Boolean Logic Operation 33%
• Compelling Design 33%
• Read Energy 33%
• Logic Integration 33%
• Memory Integration 33%

Computer Science

• Energy Consumption 100%
• Memory Design 100%
• Computer Architecture 66%
• Non-Volatile Memory 66%
• Effect Transistor 66%
• Energy Efficient 33%
• Internet of Things Device 33%
• Neural Network 33%
• Nonvolatile 33%
• Power Constraint 33%
• Application Level 33%
• Content-Addressable Memory 33%
• Write Operation 33%
• Architecture Evaluation 33%
• Boolean Logic 33%
• Memory Operation 33%