Abstract
This work investigates the impact of hydrogen/deuterium implantation at the Si/SiO 2 interface when a thin oxide is grown on implanted silicon substrate. Implantation energy and implantation dose significantly influence the interface passivation. Observed interface states at the Si/SiO 2 interface suggests an isotope effect where deuterium implanted devices yielded better interface results compared to that of hydrogen implanted devices. Deuterium implanted at 20keV with a dose of Ix 10 14 atoms/cm 2 seems to be effectively passivating the interface. Transient enhanced diffusion of implanted hydrogen and deuterium is affected by the implantation damage.
Original language | English (US) |
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Pages | 346-355 |
Number of pages | 10 |
State | Published - 2004 |
Event | Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - Proceedings of the First International Symposium - Honolulu, HI, United States Duration: Oct 3 2004 → Oct 8 2004 |
Other
Other | Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - Proceedings of the First International Symposium |
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Country/Territory | United States |
City | Honolulu, HI |
Period | 10/3/04 → 10/8/04 |
All Science Journal Classification (ASJC) codes
- General Engineering