Hydrogen/deuterium implantation for Si-dielectric interface in nanoscale devices

Research output: Contribution to conferencePaperpeer-review

Abstract

This work investigates the impact of hydrogen/deuterium implantation at the Si/SiO 2 interface when a thin oxide is grown on implanted silicon substrate. Implantation energy and implantation dose significantly influence the interface passivation. Observed interface states at the Si/SiO 2 interface suggests an isotope effect where deuterium implanted devices yielded better interface results compared to that of hydrogen implanted devices. Deuterium implanted at 20keV with a dose of Ix 10 14 atoms/cm 2 seems to be effectively passivating the interface. Transient enhanced diffusion of implanted hydrogen and deuterium is affected by the implantation damage.

Original languageEnglish (US)
Pages346-355
Number of pages10
StatePublished - Dec 1 2004
EventDielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - Proceedings of the First International Symposium - Honolulu, HI, United States
Duration: Oct 3 2004Oct 8 2004

Other

OtherDielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - Proceedings of the First International Symposium
CountryUnited States
CityHonolulu, HI
Period10/3/0410/8/04

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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