Abstract
This work investigates the impact of hydrogen/deuterium implantation at the Si/SiO 2 interface when a thin oxide is grown on implanted silicon substrate. Implantation energy and implantation dose significantly influence the interface passivation. Observed interface states at the Si/SiO 2 interface suggests an isotope effect where deuterium implanted devices yielded better interface results compared to that of hydrogen implanted devices. Deuterium implanted at 20keV with a dose of Ix 10 14 atoms/cm 2 seems to be effectively passivating the interface. Transient enhanced diffusion of implanted hydrogen and deuterium is affected by the implantation damage.
| Original language | English (US) |
|---|---|
| Pages | 346-355 |
| Number of pages | 10 |
| State | Published - 2004 |
| Event | Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - Proceedings of the First International Symposium - Honolulu, HI, United States Duration: Oct 3 2004 → Oct 8 2004 |
Other
| Other | Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - Proceedings of the First International Symposium |
|---|---|
| Country/Territory | United States |
| City | Honolulu, HI |
| Period | 10/3/04 → 10/8/04 |
All Science Journal Classification (ASJC) codes
- General Engineering