Hydrogen/deuterium implantation for Si-dielectric interface in nanoscale devices

Keyphrases

• Deuterium 100%
• Deuterium Implantation 100%
• Dielectric Interface 100%
• Energy Dose 33%
• Implantable Devices 66%
• Implantation Damage 33%
• Implantation Dose 33%
• Implantation Energy 33%
• Implanted Silicon 33%
• Interface Passivation 33%
• Interface States 33%
• Isotope Effect 33%
• Nanoscale Devices 100%
• Passivated 33%
• Si-SiO2 Interface 66%
• Silicon Substrate 33%
• Thin Oxides 33%
• Transient Diffusion 33%

Material Science

• Deuterium 100%
• Dielectric Material 100%
• Oxide Compound 20%
• Silicon 20%