III-Nitride HEMTs for THz Applications

G. Purnachandra Rao, Trupti Ranjan Lenka, Madhuchanda Choudhury, Hieu Pham Trung Nguyen

Research output: Chapter in Book/Report/Conference proceedingChapter

2 Scopus citations


This chapter exhaustively explores the prospects of III-Nitride-based High Electron Mobility Transistors (HEMTs) for THz applications. III-Nitride binary semiconductors include AlN, GaN, and InN, having bandgaps of 6.2 eV, 3.4 eV, and 0.7 eV, respectively, which create heterostructures with its high bandgap alloys leading to the formation of 2DEG (two-dimensional electron gas). The 2DEG is created at the heterojunction due to the discontinuity of conduction energy band leading to the formation of quantum well (QW). The electrons present in the 2DEG/QW do not experience any scattering effects, resulting in high electron mobility. The field-effect transistor with high electron mobility is called HEMT, which is a potential candidate for high-power and high-frequency electronic applications. This chapter goes over a full investigation of THz generation and its performance characteristics such as noise power and THz detector response. This attribute has a significant impact on device sensitivity. It may be deduced from prior studies that reducing noise improves the device's sensitivity significantly. Hence, in this piece of work, the THz capability of this device is presented.

Original languageEnglish (US)
Title of host publicationTerahertz Devices, Circuits and Systems
Subtitle of host publicationMaterials, Methods and Applications
PublisherSpringer Nature
Number of pages18
ISBN (Electronic)9789811941054
ISBN (Print)9789811941047
StatePublished - Jan 1 2022

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy
  • General Engineering


  • 2DEG
  • AlGaN/GaN
  • HEMT
  • Nitrides
  • Polarization
  • Quantum well
  • Responsivity
  • Terahertz (THz)


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