III-Nitride HEMTs for THz Applications

Keyphrases

• III-nitrides 100%
• 2-dimensional Electron Gas (2DEG) 100%
• High Electron Mobility Transistor 100%
• THz Applications 100%
• High Electron Mobility 66%
• Quantum Well 66%
• Device Sensitivity 66%
• Noise Reduction 33%
• Heterojunction 33%
• High Power 33%
• Band Gap 33%
• Performance Characteristics 33%
• Heterostructure 33%
• Field-effect Transistors 33%
• Energy Band 33%
• THz Generation 33%
• Noise Power 33%
• Electronic Applications 33%
• Scattering Effect 33%
• Detector Response 33%
• High Bandgap 33%
• High-frequency Electronics 33%
• Power Detector 33%
• Binary Semiconductors 33%
• THz Detector 33%

Material Science

• Nitride Compound 100%
• Transistor 100%
• Electron Mobility 100%
• Heterojunction 40%
• Quantum Well 40%
• Aluminum Nitride 20%
• Field Effect Transistor 20%