III-Nitride HEMTs for THz Applications

Engineering & Materials Science

• Two dimensional electron gas 100%
• Nitrides 68%
• High electron mobility transistors 65%
• Electron mobility 44%
• Semiconductor quantum wells 44%
• Heterojunctions 37%
• Energy gap 32%
• Band structure 19%
• Field effect transistors 15%
• Electrons 14%
• Scattering 13%
• Semiconductor materials 12%
• Detectors 11%

Physics & Astronomy

• high electron mobility transistors 58%
• nitrides 52%
• electron mobility 39%
• quantum wells 29%
• electron gas 18%
• energy bands 17%
• discontinuity 16%
• heterojunctions 16%
• field effect transistors 14%
• conduction 12%
• detectors 10%
• electronics 9%
• scattering 9%
• performance 8%
• electrons 8%