Epitaxially grown GaN-based nanowire heterostructure arrays on (111) sapphire substrates have special characteristics and the ability to create practical devices. InGaN disks are often used as the active light-emitting device in nanowire heterostructures. By adjusting the composition of indium, the emission wavelength can be modified. In this paper, we have addressed the development of nanowire light-emitting diode for better performance in the light industry. We have designed green and yellow InGaN/AlGaN nanowire LEDs that exhibit remarkable efficiency using quantum dots grown on sapphire (111) substrate. The substrate temperature and the width of InGaN/GaN layers are the two growth parameters modified to impact the peak emission wavelengths. When compared to the results recorded at 5K, the devices exhibit comparatively higher (>40%) internal quantum efficiency at ambient temperature. A minimal blue-shift in the peak emission spectra with no efficiency droop is also observed when injection current is pushed up to 710 A/cm2.