III-Nitride Nanowire LEDs for Enhanced Light Technology

S. Das, T. R. Lenka, F. A. Talukdar, H. P.T. Nguyen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Epitaxially grown GaN-based nanowire heterostructure arrays on (111) sapphire substrates have special characteristics and the ability to create practical devices. InGaN disks are often used as the active light-emitting device in nanowire heterostructures. By adjusting the composition of indium, the emission wavelength can be modified. In this paper, we have addressed the development of nanowire light-emitting diode for better performance in the light industry. We have designed green and yellow InGaN/AlGaN nanowire LEDs that exhibit remarkable efficiency using quantum dots grown on sapphire (111) substrate. The substrate temperature and the width of InGaN/GaN layers are the two growth parameters modified to impact the peak emission wavelengths. When compared to the results recorded at 5K, the devices exhibit comparatively higher (>40%) internal quantum efficiency at ambient temperature. A minimal blue-shift in the peak emission spectra with no efficiency droop is also observed when injection current is pushed up to 710 A/cm2.

Original languageEnglish (US)
Title of host publication2023 IEEE 33rd International Conference on Microelectronics, MIEL 2023
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350347760
DOIs
StatePublished - 2023
Externally publishedYes
Event33rd IEEE International Conference on Microelectronics, MIEL 2023 - Nis, Serbia
Duration: Oct 16 2023Oct 18 2023

Publication series

Name2023 IEEE 33rd International Conference on Microelectronics, MIEL 2023

Conference

Conference33rd IEEE International Conference on Microelectronics, MIEL 2023
Country/TerritorySerbia
CityNis
Period10/16/2310/18/23

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Instrumentation
  • Hardware and Architecture
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

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