@inproceedings{b6a45b78a4684e8a964ed80d61c85866,
title = "III-Nitride Nanowire LEDs for Enhanced Light Technology",
abstract = "Epitaxially grown GaN-based nanowire heterostructure arrays on (111) sapphire substrates have special characteristics and the ability to create practical devices. InGaN disks are often used as the active light-emitting device in nanowire heterostructures. By adjusting the composition of indium, the emission wavelength can be modified. In this paper, we have addressed the development of nanowire light-emitting diode for better performance in the light industry. We have designed green and yellow InGaN/AlGaN nanowire LEDs that exhibit remarkable efficiency using quantum dots grown on sapphire (111) substrate. The substrate temperature and the width of InGaN/GaN layers are the two growth parameters modified to impact the peak emission wavelengths. When compared to the results recorded at 5K, the devices exhibit comparatively higher (>40%) internal quantum efficiency at ambient temperature. A minimal blue-shift in the peak emission spectra with no efficiency droop is also observed when injection current is pushed up to 710 A/cm2.",
author = "S. Das and Lenka, {T. R.} and Talukdar, {F. A.} and Nguyen, {H. P.T.}",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 33rd IEEE International Conference on Microelectronics, MIEL 2023 ; Conference date: 16-10-2023 Through 18-10-2023",
year = "2023",
doi = "10.1109/MIEL58498.2023.10315936",
language = "English (US)",
series = "2023 IEEE 33rd International Conference on Microelectronics, MIEL 2023",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2023 IEEE 33rd International Conference on Microelectronics, MIEL 2023",
address = "United States",
}