Skip to main navigation
Skip to search
Skip to main content
New Jersey Institute of Technology Home
Help & FAQ
Link opens in a new tab
Search content at New Jersey Institute of Technology
Home
Profiles
Research units
Facilities
Federal Grants
Research output
Press/Media
III-Nitride Nanowire LEDs for Enhanced Light Technology
S. Das
, T. R. Lenka
, F. A. Talukdar
, H. P.T. Nguyen
Research output
:
Chapter in Book/Report/Conference proceeding
›
Conference contribution
1
Link opens in a new tab
Scopus citations
Overview
Fingerprint
Fingerprint
Dive into the research topics of 'III-Nitride Nanowire LEDs for Enhanced Light Technology'. Together they form a unique fingerprint.
Sort by
Weight
Alphabetically
Keyphrases
Emission Spectrum
100%
III-nitrides
100%
Indium Gallium Nitride (InGaN)
100%
Lighting Technology
100%
Nitride Nanowires
100%
Nanowire LEDs
100%
Nanowire Heterostructures
66%
Peak Emissions
66%
Blue Shift
33%
Nanowires
33%
Injection Current
33%
Light-emitting Diodes
33%
Light-emitting Devices
33%
Quantum Dots
33%
Efficiency Droop
33%
Internal Quantum Efficiency
33%
Indium
33%
GaN Layers
33%
Epitaxially Grown
33%
Ambient Temperature
33%
Substrate Temperature
33%
GaN-based
33%
Sapphire
33%
Sapphire Substrate
33%
AlGaN Nanowires
33%
Practical Devices
33%
Growth Parameters
33%
Light Industry
33%
Better Performance
33%
Special Characteristics
33%
Heterojunction Array
33%
Material Science
Nanowire
100%
Light-Emitting Diode
100%
Nitride Compound
100%
Heterojunction
40%
Sapphire
40%
Quantum Dot
20%
Indium
20%
Physics
Nitride
100%
Nanowire
100%
Quantum Dot
20%
Light Emitting Diode
20%
Emission Spectra
20%
Indium
20%
Blue Shift
20%
Heterojunctions
20%