III-Nitride nanowire optoelectronics

Songrui Zhao; Hieu P.T. Nguyen; Md G. Kibria; Zetian Mi

doi:10.1016/j.pquantelec.2015.11.001

III-Nitride nanowire optoelectronics

Songrui Zhao, Hieu P.T. Nguyen, Md G. Kibria, Zetian Mi

Electrical and Computer Engineering

Research output: Contribution to journal › Review article › peer-review

197 Scopus citations

Abstract

Group-III nitride nanowire structures, including GaN, InN, AlN and their alloys, have been intensively studied in the past decade. Unique to this material system is that its energy bandgap can be tuned from the deep ultraviolet (~6.2 eV for AlN) to the near infrared (~0.65 eV for InN). In this article, we provide an overview on the recent progress made in III-nitride nanowire optoelectronic devices, including light emitting diodes, lasers, photodetectors, single photon sources, intraband devices, solar cells, and artificial photosynthesis. The present challenges and future prospects of III-nitride nanowire optoelectronic devices are also discussed.

Original language	English (US)
Pages (from-to)	14-68
Number of pages	55
Journal	Progress in Quantum Electronics
Volume	44
DOIs	https://doi.org/10.1016/j.pquantelec.2015.11.001
State	Published - Nov 2015

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Statistical and Nonlinear Physics
Electrical and Electronic Engineering

Keywords

AlN
GaN
InN
LED
Laser
Nanowire
Optoelectronics
Photodetector
Photosynthesis
Si photonics
Solar cell
Solar fuel
Solar hydrogen
Water splitting

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10.1016/j.pquantelec.2015.11.001

Cite this

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title = "III-Nitride nanowire optoelectronics",

abstract = "Group-III nitride nanowire structures, including GaN, InN, AlN and their alloys, have been intensively studied in the past decade. Unique to this material system is that its energy bandgap can be tuned from the deep ultraviolet (~6.2 eV for AlN) to the near infrared (~0.65 eV for InN). In this article, we provide an overview on the recent progress made in III-nitride nanowire optoelectronic devices, including light emitting diodes, lasers, photodetectors, single photon sources, intraband devices, solar cells, and artificial photosynthesis. The present challenges and future prospects of III-nitride nanowire optoelectronic devices are also discussed.",

keywords = "AlN, GaN, InN, LED, Laser, Nanowire, Optoelectronics, Photodetector, Photosynthesis, Si photonics, Solar cell, Solar fuel, Solar hydrogen, Water splitting",

author = "Songrui Zhao and Nguyen, {Hieu P.T.} and Kibria, {Md G.} and Zetian Mi",

year = "2015",

month = nov,

doi = "10.1016/j.pquantelec.2015.11.001",

language = "English (US)",

volume = "44",

pages = "14--68",

journal = "Progress in Quantum Electronics",

issn = "0079-6727",

publisher = "Elsevier Ltd",

}

TY - JOUR

T1 - III-Nitride nanowire optoelectronics

AU - Zhao, Songrui

AU - Nguyen, Hieu P.T.

AU - Kibria, Md G.

AU - Mi, Zetian

PY - 2015/11

Y1 - 2015/11

N2 - Group-III nitride nanowire structures, including GaN, InN, AlN and their alloys, have been intensively studied in the past decade. Unique to this material system is that its energy bandgap can be tuned from the deep ultraviolet (~6.2 eV for AlN) to the near infrared (~0.65 eV for InN). In this article, we provide an overview on the recent progress made in III-nitride nanowire optoelectronic devices, including light emitting diodes, lasers, photodetectors, single photon sources, intraband devices, solar cells, and artificial photosynthesis. The present challenges and future prospects of III-nitride nanowire optoelectronic devices are also discussed.

AB - Group-III nitride nanowire structures, including GaN, InN, AlN and their alloys, have been intensively studied in the past decade. Unique to this material system is that its energy bandgap can be tuned from the deep ultraviolet (~6.2 eV for AlN) to the near infrared (~0.65 eV for InN). In this article, we provide an overview on the recent progress made in III-nitride nanowire optoelectronic devices, including light emitting diodes, lasers, photodetectors, single photon sources, intraband devices, solar cells, and artificial photosynthesis. The present challenges and future prospects of III-nitride nanowire optoelectronic devices are also discussed.

KW - AlN

KW - GaN

KW - InN

KW - LED

KW - Laser

KW - Nanowire

KW - Optoelectronics

KW - Photodetector

KW - Photosynthesis

KW - Si photonics

KW - Solar cell

KW - Solar fuel

KW - Solar hydrogen

KW - Water splitting

UR - http://www.scopus.com/inward/record.url?scp=84951863085&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84951863085&partnerID=8YFLogxK

U2 - 10.1016/j.pquantelec.2015.11.001

DO - 10.1016/j.pquantelec.2015.11.001

M3 - Review article

AN - SCOPUS:84951863085

SN - 0079-6727

VL - 44

SP - 14

EP - 68

JO - Progress in Quantum Electronics

JF - Progress in Quantum Electronics

ER -

III-Nitride nanowire optoelectronics

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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