Abstract
Spin switch (SS) is a promising spintronic device which exhibits compactness, low power, non-volatility, input-output isolation leveraging giant spin Hall effect, spin transfer torque, and dipolar coupling. In this paper, we propose a novel device-to-architecture co-design for an in-memory computing platform using coterminous SS (IMCS2), which could simultaneously work as non-volatile memory and reconfigurable in-memory logic (AND/NAND, OR/NOR, and XOR/XNOR) without add-on logic circuits to memory chip. The computed logic output could be simply read out like a normal magnetic random access memory bit cell using the shared memory peripheral circuits. Such intrinsic in-memory logic could be used to process data within memory to greatly reduce power-hungry and long distance data communication in the conventional von Neumann computing system. The IMCS2-based in-memory bulk bitwise Boolean vector operation shows ∼9× energy saving and ∼3× speedup compared with that of DRAM-based in-memory computing platform. We further employ in-memory multiplication to evaluate the performance of the proposed in-memory computing platform for vector-vector multiplication with different vector sizes.
Original language | English (US) |
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Article number | 1400314 |
Journal | IEEE Transactions on Magnetics |
Volume | 54 |
Issue number | 7 |
DOIs | |
State | Published - Jul 2018 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
Keywords
- Giant spin Hall effect (GSHE)
- in-memory computing
- memory architecture
- reconfigurable logic
- spin switch (SS)