Impact of gate material on low-frequency noise of nMOSFETs with 1.5 nm SiON gate dielectric: Testing the limits of the number fluctuations theory

P. Srinivasan, E. Simoen, L. Pantisano, C. Claeys, Durgamadhab Misra

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

It is shown that the gate material has a strong impact on the low-frequency (LF) 1/f noise of silicon nMOSFETs with a 1.5 nm SiON gate dielectric. Highest noise is observed for transistors with an n-type polysilicon gate, compared with their counterparts having a metal (TaN) or a fully nickel-silicided polysilicon gate (NiSi). The differences are particularly pronounced in strong inversion (high gate voltage V GS). The observations cannot be explained readily in the frame of the standard correlated-mobility fluctuations theory. They point rather to the impact of the charges/traps at the gate-dielectric interface, which are better screened in case of a metal gate. At the moment, one can only speculate on the origin of the LF fluctuations, giving rise to the higher noise in strong inversion. One hypothesis is that the image charge at the gate induced by a filled oxide trap contributes to excess scattering in the channel.

Original languageEnglish (US)
Title of host publicationNOISE AND FLUCTUATIONS
Subtitle of host publication18th International Conference on Noise and Fluctuations - ICNF 2005
Pages231-234
Number of pages4
Volume780
DOIs
StatePublished - Aug 25 2005
EventNOISE AND FLUCTUATIONS: 18th International Conference on Noise and Fluctuations - ICNF 2005 - Salamanca, Spain
Duration: Sep 19 2005Sep 23 2005

Other

OtherNOISE AND FLUCTUATIONS: 18th International Conference on Noise and Fluctuations - ICNF 2005
CountrySpain
CitySalamanca
Period9/19/059/23/05

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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