Impact of high-κ and SiO2 interfacial layer thickness on low-frequency (1/f) noise in aggressively scaled metal gate/HfO2 n-MOSFETs: role of high-κ phonons

P. Srinivasan, B. P. Linder, V. Narayanan, D. Misra, E. Cartier

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

The effect of high-κ (tHfO2) and interfacial layer thickness (tIL) on the low-frequency (LF) drain current noise is studied in n-MOSFETs with HfO2 gate oxide and TiN metal gate. While a 1/f type spectrum is observed, the dominant noise mechanism is found to be mobility fluctuations. The variation in Hooge's parameter αH is studied and the results are correlated with channel electron mobility (μ). The physical origin of noise fluctuations is then determined from the comparison. The results show that high-κ phonon scattering is likely the dominant source for 1/f noise in aggressively scaled HfO2-metal gate devices. The devices meet the ITRS specification and the selection of tIL becomes significant for use in analog and mixed signal based applications.

Original languageEnglish (US)
Pages (from-to)2274-2277
Number of pages4
JournalMicroelectronic Engineering
Volume84
Issue number9-10
DOIs
StatePublished - Sep 2007

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Keywords

  • 1/f noise
  • High-k
  • Hooge's parameter
  • Mobility
  • Phonon scattering
  • metal gates

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