Impact of high-κ and SiO2 interfacial layer thickness on low-frequency (1/f) noise in aggressively scaled metal gate/HfO2 n-MOSFETs: role of high-κ phonons

P. Srinivasan, B. P. Linder, V. Narayanan, D. Misra, E. Cartier

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

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