Impact of high-κ and SiO2 interfacial layer thickness on low-frequency (1/f) noise in aggressively scaled metal gate/HfO2 n-MOSFETs: role of high-κ phonons

  • P. Srinivasan
  • , B. P. Linder
  • , V. Narayanan
  • , D. Misra
  • , E. Cartier

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

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