Impact of high-k gate stack material with metal gates on LF noise in n- and p-MOSFETs

P. Srinivasan, E. Simoen, L. Pantisano, C. Claeys, D. Misra

Research output: Contribution to journalConference articlepeer-review

34 Scopus citations

Abstract

The aim of this paper is to study the 1/f noise performance of n- and p-channel MOSFETs with different Hf-based gate stacks, deposited by MOCVD and using metal (PVD TaN) as a gate material. The drain current dependence is different for n- and p- channel devices over the noise spectra, showing different noise origin mechanisms - mobility fluctuations for pMOS and number fluctuations for nMOS. Asymmetric trap density distributions with energy between n- and pMOS have been observed which is a possible reason for the observed lower noise magnitude in pMOS devices. A fair comparison using Hooge's parameter and trap densities as figures of merit shows weak correlation on the Hf-composition, allowing a large window for gate stack processing of devices.

Original languageEnglish (US)
Pages (from-to)226-229
Number of pages4
JournalMicroelectronic Engineering
Volume80
Issue numberSUPPL.
DOIs
StatePublished - Jun 17 2005
Event14th Biennial Conference on Insulating Films on Semiconductors -
Duration: Jun 22 2005Jun 24 2005

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Keywords

  • Hf silicates
  • High-K
  • LF noise
  • Metal gates
  • Mobility fluctuations
  • Number fluctuations

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