Abstract
The aim of this paper is to study the 1/f noise performance of n- and p-channel MOSFETs with different Hf-based gate stacks, deposited by MOCVD and using metal (PVD TaN) as a gate material. The drain current dependence is different for n- and p- channel devices over the noise spectra, showing different noise origin mechanisms - mobility fluctuations for pMOS and number fluctuations for nMOS. Asymmetric trap density distributions with energy between n- and pMOS have been observed which is a possible reason for the observed lower noise magnitude in pMOS devices. A fair comparison using Hooge's parameter and trap densities as figures of merit shows weak correlation on the Hf-composition, allowing a large window for gate stack processing of devices.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 226-229 |
| Number of pages | 4 |
| Journal | Microelectronic Engineering |
| Volume | 80 |
| Issue number | SUPPL. |
| DOIs | |
| State | Published - Jun 17 2005 |
| Event | 14th Biennial Conference on Insulating Films on Semiconductors - Duration: Jun 22 2005 → Jun 24 2005 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
Keywords
- Hf silicates
- High-K
- LF noise
- Metal gates
- Mobility fluctuations
- Number fluctuations