Keyphrases
Stacked Material
100%
NMOSFET
100%
Metal Gate
100%
Low-frequency (LF) Noise
100%
High-k Gate Stack
100%
PMOS
100%
PMOSFET
100%
Gate Stack
66%
N-channel
66%
P-channel
66%
Trap Density
66%
Low Noise
33%
MOSFET
33%
Weak Correlation
33%
Current Dependence
33%
Noise Spectrum
33%
Large Windows
33%
Gate Material
33%
Metal-organic Chemical Vapor Deposition (MOCVD)
33%
Origin Mechanism
33%
Density Distribution
33%
NMOS
33%
Fair Comparison
33%
Drain Current
33%
Mobility Fluctuation
33%
Mechanism Mobility
33%
Hooge Parameter
33%
Number Fluctuations
33%
Noise Performance
33%
Engineering
Gate Stack
100%
Metal Gate
100%
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Energy Engineering
33%
Figure of Merit
33%
Physical Vapor Deposition
33%
Channel Device
33%
Fair Comparison
33%
Density Distribution
33%
Current Drain
33%
Noise Spectra
33%
Noise Performance
33%
Material Science
Density
100%
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Physical Vapor Deposition
50%
Physics
Field Effect Transistor
100%
Low Noise
50%
Noise Spectra
50%
Density Distribution
50%