Impact of plasma-charging damage polarity on MOSFET noise

K. P. Cheung, S. Martin, D. Misra, K. Steiner, J. I. Colonell, C. P. Chang, W. Y.C. Lai, C. T. Liu, R. Liu, C. S. Pai

Research output: Contribution to journalConference articlepeer-review

4 Scopus citations


Plasma-charging damage is known to be high-field injection phenomenon during plasma processing. The impact of this damage on low frequency MOSFET noise is investigated. The consensus is that plasma-charging damage increases the low frequency noise of the MOSFET. However, a strong dependence of the MOSFET low frequency noise is observed on the polarity of the plasma-charging damage. When the damage is of the gate-injection type, the MOSFET low frequency noise is insensitive to damage, whereas when the polarity is of substrate-injection type, the MOSFET low frequency noise is very sensitive to damage.

Original languageEnglish (US)
Pages (from-to)437-440
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
StatePublished - 1997
Externally publishedYes
Event1997 International Electron Devices Meeting - Washington, DC, USA
Duration: Dec 7 1997Dec 10 1997

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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