Impact of plasma-charging damage polarity on MOSFET noise

K. P. Cheung; S. Martin; D. Misra; K. Steiner; J. I. Colonell; C. P. Chang; W. Y.C. Lai; C. T. Liu; R. Liu; C. S. Pai

Impact of plasma-charging damage polarity on MOSFET noise

K. P. Cheung, S. Martin, D. Misra, K. Steiner, J. I. Colonell, C. P. Chang, W. Y.C. Lai, C. T. Liu, R. Liu, C. S. Pai

Research output: Contribution to journal › Conference article › peer-review

Abstract

Plasma-charging damage is known to be high-field injection phenomenon during plasma processing. The impact of this damage on low frequency MOSFET noise is investigated. The consensus is that plasma-charging damage increases the low frequency noise of the MOSFET. However, a strong dependence of the MOSFET low frequency noise is observed on the polarity of the plasma-charging damage. When the damage is of the gate-injection type, the MOSFET low frequency noise is insensitive to damage, whereas when the polarity is of substrate-injection type, the MOSFET low frequency noise is very sensitive to damage.

Original language	English (US)
Pages (from-to)	437-440
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
State	Published - 1997
Externally published	Yes
Event	1997 International Electron Devices Meeting - Washington, DC, USA Duration: Dec 7 1997 → Dec 10 1997

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

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title = "Impact of plasma-charging damage polarity on MOSFET noise",

abstract = "Plasma-charging damage is known to be high-field injection phenomenon during plasma processing. The impact of this damage on low frequency MOSFET noise is investigated. The consensus is that plasma-charging damage increases the low frequency noise of the MOSFET. However, a strong dependence of the MOSFET low frequency noise is observed on the polarity of the plasma-charging damage. When the damage is of the gate-injection type, the MOSFET low frequency noise is insensitive to damage, whereas when the polarity is of substrate-injection type, the MOSFET low frequency noise is very sensitive to damage.",

author = "Cheung, {K. P.} and S. Martin and D. Misra and K. Steiner and Colonell, {J. I.} and Chang, {C. P.} and Lai, {W. Y.C.} and Liu, {C. T.} and R. Liu and Pai, {C. S.}",

year = "1997",

language = "English (US)",

pages = "437--440",

journal = "Technical Digest - International Electron Devices Meeting, IEDM",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "1997 International Electron Devices Meeting ; Conference date: 07-12-1997 Through 10-12-1997",

}

TY - JOUR

T1 - Impact of plasma-charging damage polarity on MOSFET noise

AU - Cheung, K. P.

AU - Martin, S.

AU - Misra, D.

AU - Steiner, K.

AU - Colonell, J. I.

AU - Chang, C. P.

AU - Lai, W. Y.C.

AU - Liu, C. T.

AU - Liu, R.

AU - Pai, C. S.

PY - 1997

Y1 - 1997

N2 - Plasma-charging damage is known to be high-field injection phenomenon during plasma processing. The impact of this damage on low frequency MOSFET noise is investigated. The consensus is that plasma-charging damage increases the low frequency noise of the MOSFET. However, a strong dependence of the MOSFET low frequency noise is observed on the polarity of the plasma-charging damage. When the damage is of the gate-injection type, the MOSFET low frequency noise is insensitive to damage, whereas when the polarity is of substrate-injection type, the MOSFET low frequency noise is very sensitive to damage.

AB - Plasma-charging damage is known to be high-field injection phenomenon during plasma processing. The impact of this damage on low frequency MOSFET noise is investigated. The consensus is that plasma-charging damage increases the low frequency noise of the MOSFET. However, a strong dependence of the MOSFET low frequency noise is observed on the polarity of the plasma-charging damage. When the damage is of the gate-injection type, the MOSFET low frequency noise is insensitive to damage, whereas when the polarity is of substrate-injection type, the MOSFET low frequency noise is very sensitive to damage.

UR - http://www.scopus.com/inward/record.url?scp=84886448130&partnerID=8YFLogxK

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M3 - Conference article

AN - SCOPUS:84886448130

SN - 0163-1918

SP - 437

EP - 440

JO - Technical Digest - International Electron Devices Meeting, IEDM

JF - Technical Digest - International Electron Devices Meeting, IEDM

T2 - 1997 International Electron Devices Meeting

Y2 - 7 December 1997 through 10 December 1997

ER -

Impact of plasma-charging damage polarity on MOSFET noise

Abstract

All Science Journal Classification (ASJC) codes

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