Impact of plasma-charging damage polarity on MOSFET noise

K. P. Cheung; S. Martin; D. Misra; K. Steiner; J. I. Colonell; C. P. Chang; W. Y.C. Lai; C. T. Liu; R. Liu; C. S. Pai

Impact of plasma-charging damage polarity on MOSFET noise

K. P. Cheung
, S. Martin
, D. Misra
, K. Steiner
, J. I. Colonell
, C. P. Chang
, W. Y.C. Lai
, C. T. Liu
, R. Liu
, C. S. Pai

Research output: Contribution to journal › Conference article › peer-review

Abstract

Plasma-charging damage is known to be high-field injection phenomenon during plasma processing. The impact of this damage on low frequency MOSFET noise is investigated. The consensus is that plasma-charging damage increases the low frequency noise of the MOSFET. However, a strong dependence of the MOSFET low frequency noise is observed on the polarity of the plasma-charging damage. When the damage is of the gate-injection type, the MOSFET low frequency noise is insensitive to damage, whereas when the polarity is of substrate-injection type, the MOSFET low frequency noise is very sensitive to damage.

Original language	English (US)
Pages (from-to)	437-440
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
State	Published - 1997
Externally published	Yes
Event	1997 International Electron Devices Meeting - Washington, DC, USA Duration: Dec 7 1997 → Dec 10 1997

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

@article{2f9e8662fe1543b4b294f5474ae81316,

title = "Impact of plasma-charging damage polarity on MOSFET noise",

abstract = "Plasma-charging damage is known to be high-field injection phenomenon during plasma processing. The impact of this damage on low frequency MOSFET noise is investigated. The consensus is that plasma-charging damage increases the low frequency noise of the MOSFET. However, a strong dependence of the MOSFET low frequency noise is observed on the polarity of the plasma-charging damage. When the damage is of the gate-injection type, the MOSFET low frequency noise is insensitive to damage, whereas when the polarity is of substrate-injection type, the MOSFET low frequency noise is very sensitive to damage.",

author = "Cheung, \{K. P.\} and S. Martin and D. Misra and K. Steiner and Colonell, \{J. I.\} and Chang, \{C. P.\} and Lai, \{W. Y.C.\} and Liu, \{C. T.\} and R. Liu and Pai, \{C. S.\}",

year = "1997",

language = "English (US)",

pages = "437--440",

journal = "Technical Digest - International Electron Devices Meeting, IEDM",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "1997 International Electron Devices Meeting ; Conference date: 07-12-1997 Through 10-12-1997",

}

TY - JOUR

T1 - Impact of plasma-charging damage polarity on MOSFET noise

AU - Cheung, K. P.

AU - Martin, S.

AU - Misra, D.

AU - Steiner, K.

AU - Colonell, J. I.

AU - Chang, C. P.

AU - Lai, W. Y.C.

AU - Liu, C. T.

AU - Liu, R.

AU - Pai, C. S.

PY - 1997

Y1 - 1997

N2 - Plasma-charging damage is known to be high-field injection phenomenon during plasma processing. The impact of this damage on low frequency MOSFET noise is investigated. The consensus is that plasma-charging damage increases the low frequency noise of the MOSFET. However, a strong dependence of the MOSFET low frequency noise is observed on the polarity of the plasma-charging damage. When the damage is of the gate-injection type, the MOSFET low frequency noise is insensitive to damage, whereas when the polarity is of substrate-injection type, the MOSFET low frequency noise is very sensitive to damage.

AB - Plasma-charging damage is known to be high-field injection phenomenon during plasma processing. The impact of this damage on low frequency MOSFET noise is investigated. The consensus is that plasma-charging damage increases the low frequency noise of the MOSFET. However, a strong dependence of the MOSFET low frequency noise is observed on the polarity of the plasma-charging damage. When the damage is of the gate-injection type, the MOSFET low frequency noise is insensitive to damage, whereas when the polarity is of substrate-injection type, the MOSFET low frequency noise is very sensitive to damage.

UR - https://www.scopus.com/pages/publications/84886448130

UR - https://www.scopus.com/pages/publications/84886448130#tab=citedBy

M3 - Conference article

AN - SCOPUS:84886448130

SN - 0163-1918

SP - 437

EP - 440

JO - Technical Digest - International Electron Devices Meeting, IEDM

JF - Technical Digest - International Electron Devices Meeting, IEDM

T2 - 1997 International Electron Devices Meeting

Y2 - 7 December 1997 through 10 December 1997

ER -

Impact of plasma-charging damage polarity on MOSFET noise

Abstract

All Science Journal Classification (ASJC) codes

Other files and links

Fingerprint

Cite this