Impact of surface recombination on the performance of phosphor-free InGaN/GaN nanowire white light emitting diodes

S. Zhang, A. T. Connie, H. P.T. Nguyen, Q. Wang, I. Shih, Z. Mi

Research output: Contribution to conferencePaperpeer-review

Abstract

We show that the performance of InGaN/GaN axial nanowire LEDs is largely limited by the poor carrier injection efficiency. We have further demonstrated high performance phosphor-free white LEDs using InGaN/GaN/AlGaN dot-in-a-wire core-shell heterostructures.

Original languageEnglish (US)
StatePublished - 2014
Externally publishedYes
Event2014 Conference on Lasers and Electro-Optics, CLEO 2014 - San Jose, United States
Duration: Jun 8 2014Jun 13 2014

Other

Other2014 Conference on Lasers and Electro-Optics, CLEO 2014
CountryUnited States
CitySan Jose
Period6/8/146/13/14

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials

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