Abstract
We show that the performance of InGaN/GaN axial nanowire LEDs is largely limited by the poor carrier injection efficiency. We have further demonstrated high performance phosphor-free white LEDs using InGaN/GaN/AlGaN dot-in-a-wire core-shell heterostructures.
Original language | English (US) |
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State | Published - 2014 |
Externally published | Yes |
Event | 2014 Conference on Lasers and Electro-Optics, CLEO 2014 - San Jose, United States Duration: Jun 8 2014 → Jun 13 2014 |
Other
Other | 2014 Conference on Lasers and Electro-Optics, CLEO 2014 |
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Country/Territory | United States |
City | San Jose |
Period | 6/8/14 → 6/13/14 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Atomic and Molecular Physics, and Optics
- Electronic, Optical and Magnetic Materials