Impact of surface recombination on the performance of phosphor-free InGaN/GaN nanowire white light emitting diodes

S. Zhang; A. T. Connie; H. P.T. Nguyen; Q. Wang; I. Shih; Z. Mi

Impact of surface recombination on the performance of phosphor-free InGaN/GaN nanowire white light emitting diodes

S. Zhang, A. T. Connie, H. P.T. Nguyen, Q. Wang, I. Shih, Z. Mi

Research output: Contribution to conference › Paper › peer-review

Abstract

We show that the performance of InGaN/GaN axial nanowire LEDs is largely limited by the poor carrier injection efficiency. We have further demonstrated high performance phosphor-free white LEDs using InGaN/GaN/AlGaN dot-in-a-wire core-shell heterostructures.

Original language	English (US)
State	Published - 2014
Externally published	Yes
Event	2014 Conference on Lasers and Electro-Optics, CLEO 2014 - San Jose, United States Duration: Jun 8 2014 → Jun 13 2014

Other

Other	2014 Conference on Lasers and Electro-Optics, CLEO 2014
Country/Territory	United States
City	San Jose
Period	6/8/14 → 6/13/14

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials

Cite this

@conference{521b491e10674cf4a3c8371cf5d38e76,

title = "Impact of surface recombination on the performance of phosphor-free InGaN/GaN nanowire white light emitting diodes",

abstract = "We show that the performance of InGaN/GaN axial nanowire LEDs is largely limited by the poor carrier injection efficiency. We have further demonstrated high performance phosphor-free white LEDs using InGaN/GaN/AlGaN dot-in-a-wire core-shell heterostructures.",

author = "S. Zhang and Connie, {A. T.} and Nguyen, {H. P.T.} and Q. Wang and I. Shih and Z. Mi",

note = "Publisher Copyright: {\textcopyright} 2014 Optical Society of America.; 2014 Conference on Lasers and Electro-Optics, CLEO 2014 ; Conference date: 08-06-2014 Through 13-06-2014",

year = "2014",

language = "English (US)",

}

TY - CONF

T1 - Impact of surface recombination on the performance of phosphor-free InGaN/GaN nanowire white light emitting diodes

AU - Zhang, S.

AU - Connie, A. T.

AU - Nguyen, H. P.T.

AU - Wang, Q.

AU - Shih, I.

AU - Mi, Z.

PY - 2014

Y1 - 2014

N2 - We show that the performance of InGaN/GaN axial nanowire LEDs is largely limited by the poor carrier injection efficiency. We have further demonstrated high performance phosphor-free white LEDs using InGaN/GaN/AlGaN dot-in-a-wire core-shell heterostructures.

AB - We show that the performance of InGaN/GaN axial nanowire LEDs is largely limited by the poor carrier injection efficiency. We have further demonstrated high performance phosphor-free white LEDs using InGaN/GaN/AlGaN dot-in-a-wire core-shell heterostructures.

UR - http://www.scopus.com/inward/record.url?scp=84944706836&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84944706836&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:84944706836

T2 - 2014 Conference on Lasers and Electro-Optics, CLEO 2014

Y2 - 8 June 2014 through 13 June 2014

ER -

Impact of surface recombination on the performance of phosphor-free InGaN/GaN nanowire white light emitting diodes

Abstract

Other

All Science Journal Classification (ASJC) codes

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