Impact of surface recombination on the performance of phosphor-free InGaN/GaN nanowire white light emitting diodes

S. Zhang, A. T. Connie, H. P.T. Nguyen, Q. Wang, I. Shih, Z. Mi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We show that the performance of InGaN/GaN axial nanowire LEDs is largely limited by the poor carrier injection efficiency. We have further demonstrated high performance phosphor-free white LEDs using InGaN/GaN/AlGaN dot-in-a-wire core-shell heterostructures.

Original languageEnglish (US)
Title of host publicationCLEO
Subtitle of host publicationApplications and Technology, CLEO_AT 2014
PublisherOptical Society of America (OSA)
ISBN (Print)9781557529992, 9781557529992
DOIs
StatePublished - 2014
Externally publishedYes
EventCLEO: Applications and Technology, CLEO_AT 2014 - San Jose, CA, United States
Duration: Jun 8 2014Jun 13 2014

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Other

OtherCLEO: Applications and Technology, CLEO_AT 2014
CountryUnited States
CitySan Jose, CA
Period6/8/146/13/14

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

Fingerprint Dive into the research topics of 'Impact of surface recombination on the performance of phosphor-free InGaN/GaN nanowire white light emitting diodes'. Together they form a unique fingerprint.

Cite this