Impact of the gate-electrode/dielectric interface on the low-frequency noise of thin gate oxide n-channel metal-oxide-semiconductor field-effect transistors

C. Claeys, E. Simoen, P. Srinivasan, D. Misra

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

The low-frequency (LF) noise of n-MOSFETs with a 1.5 nm SiON gate oxide is studied for different gate materials, namely, a polycrystalline (poly) silicon gate, a fully nickelsilicided (FUSI) gate and a NiSi FUSI gate deposited on 10 cycles of HfO2. The principal aim is to identify the most likely origin of the predominant 1/f noise in the thin gate oxide devices by investigating the impact of the gate electrode processing. It is reported that the lowest input-referred voltage noise spectral density (SVG) in linear operation for a gate voltage at the threshold voltage is found for the FUSI transistor, while adding 10 cycles of HfO2 enhances markedly the noise magnitude. The 1/f noise characteristic behaves according to the number fluctuations theory so that the results are interpreted in terms of trapping and de-trapping of channel carriers by defects in the gate dielectric layer. Therefore, the marked effect of the gate material is at present ascribed to the different trap density in the vicinity of the gate-SiON interface, which is derived from the LF noise spectra.

Original languageEnglish (US)
Pages (from-to)627-632
Number of pages6
JournalSolid-State Electronics
Volume51
Issue number4 SPEC. ISS.
DOIs
StatePublished - Apr 2007

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Keywords

  • Carrier trapping
  • Gate SiON interface
  • Gate electrode
  • Low-frequency noise
  • MOSFETs
  • Thin gate oxide

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