Impact of the gate-electrode/dielectric interface on the low-frequency noise of thin gate oxide n-channel metal-oxide-semiconductor field-effect transistors

Keyphrases

• Low-frequency Noise 100%
• Thin Gate Oxide 100%
• N-channel 100%
• MOSFET 100%
• Gate Electrode 100%
• Dielectric Interface 100%
• HfO2 66%
• Gate Material 66%
• Silicon Oxynitride (SiON) 66%
• Electrode Fabrication 33%
• Transistor 33%
• Noise Characteristics 33%
• Low Input 33%
• Gate Oxide 33%
• Polysilicon 33%
• Noise Spectrum 33%
• NMOSFET 33%
• Trap Density 33%
• Number Fluctuations 33%
• Threshold Voltage 33%
• Noise Spectral Density 33%
• Detrapping 33%
• Gate Voltage 33%
• NiSi 33%
• Fluctuation Theory 33%
• Linear Operation 33%
• Gate Dielectric Layer 33%
• Voltage Noise 33%

Engineering

• Dielectrics 100%
• Frequency Noise 100%
• Gate Oxide 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Gate Electrode 100%
• Defects 33%
• Polysilicon 33%
• Noise Spectra 33%
• Gate Dielectric 33%
• Dielectric Layer 33%
• Spectral Noise 33%
• Gate Voltage 33%
• Noise Voltage 33%

Material Science

• Dielectric Material 100%
• Oxide Compound 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Density 66%
• Silicon 33%
• Transistor 33%