Impact of the interfacial layer on the low-frequency noise (1/f) behavior of MOSFETs with advanced gate stacks

F. Crupi; P. Srinivasan; P. Magnone; E. Simoen; C. Pace; D. Misra; C. Claeys

doi:10.1109/LED.2006.879028

Impact of the interfacial layer on the low-frequency noise (1/f) behavior of MOSFETs with advanced gate stacks

F. Crupi, P. Srinivasan, P. Magnone, E. Simoen, C. Pace, D. Misra, C. Claeys

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

58 Scopus citations

Abstract

The impact of the interfacial layer thickness on the low-frequency (LF) noise (1/f noise) behavior of n- and p-channel MOSFETs with high-κ gate dielectrics and metal gates is investigated. Decreasing the interfacial layer thickness from 0.8 to 0.4 nm affects the 1/f noise in two ways. 1) The mobility fluctuations mechanism becomes the main source of 1/f noise not only on pMOS devices, as usually observed, but also on nMOS devices. 2) A significant increase of the Hooge's parameter is observed for both types of MOSFETs. These experimental findings indicate that bringing the high-κ layer closer to the Si-SiO₂ interface enhances the 1/f noise mainly due to mobility fluctuations.

Original language	English (US)
Pages (from-to)	688-691
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	27
Issue number	8
DOIs	https://doi.org/10.1109/LED.2006.879028
State	Published - Aug 2006

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Keywords

High-κ gate dielectrics
Hooge's parameter interfacial layer
Low-frequency (LF) noise
Metal gates
Mobility fluctuations

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10.1109/LED.2006.879028

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title = "Impact of the interfacial layer on the low-frequency noise (1/f) behavior of MOSFETs with advanced gate stacks",

abstract = "The impact of the interfacial layer thickness on the low-frequency (LF) noise (1/f noise) behavior of n- and p-channel MOSFETs with high-κ gate dielectrics and metal gates is investigated. Decreasing the interfacial layer thickness from 0.8 to 0.4 nm affects the 1/f noise in two ways. 1) The mobility fluctuations mechanism becomes the main source of 1/f noise not only on pMOS devices, as usually observed, but also on nMOS devices. 2) A significant increase of the Hooge's parameter is observed for both types of MOSFETs. These experimental findings indicate that bringing the high-κ layer closer to the Si-SiO2 interface enhances the 1/f noise mainly due to mobility fluctuations.",

keywords = "High-κ gate dielectrics, Hooge's parameter interfacial layer, Low-frequency (LF) noise, Metal gates, Mobility fluctuations",

author = "F. Crupi and P. Srinivasan and P. Magnone and E. Simoen and C. Pace and D. Misra and C. Claeys",

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AU - Crupi, F.

AU - Srinivasan, P.

AU - Magnone, P.

AU - Simoen, E.

AU - Pace, C.

AU - Misra, D.

AU - Claeys, C.

PY - 2006/8

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N2 - The impact of the interfacial layer thickness on the low-frequency (LF) noise (1/f noise) behavior of n- and p-channel MOSFETs with high-κ gate dielectrics and metal gates is investigated. Decreasing the interfacial layer thickness from 0.8 to 0.4 nm affects the 1/f noise in two ways. 1) The mobility fluctuations mechanism becomes the main source of 1/f noise not only on pMOS devices, as usually observed, but also on nMOS devices. 2) A significant increase of the Hooge's parameter is observed for both types of MOSFETs. These experimental findings indicate that bringing the high-κ layer closer to the Si-SiO2 interface enhances the 1/f noise mainly due to mobility fluctuations.

AB - The impact of the interfacial layer thickness on the low-frequency (LF) noise (1/f noise) behavior of n- and p-channel MOSFETs with high-κ gate dielectrics and metal gates is investigated. Decreasing the interfacial layer thickness from 0.8 to 0.4 nm affects the 1/f noise in two ways. 1) The mobility fluctuations mechanism becomes the main source of 1/f noise not only on pMOS devices, as usually observed, but also on nMOS devices. 2) A significant increase of the Hooge's parameter is observed for both types of MOSFETs. These experimental findings indicate that bringing the high-κ layer closer to the Si-SiO2 interface enhances the 1/f noise mainly due to mobility fluctuations.

KW - High-κ gate dielectrics

KW - Hooge's parameter interfacial layer

KW - Low-frequency (LF) noise

KW - Metal gates

KW - Mobility fluctuations

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Impact of the interfacial layer on the low-frequency noise (1/f) behavior of MOSFETs with advanced gate stacks

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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