The impact of the interfacial layer thickness on the low-frequency (LF) noise (1/f noise) behavior of n- and p-channel MOSFETs with high-κ gate dielectrics and metal gates is investigated. Decreasing the interfacial layer thickness from 0.8 to 0.4 nm affects the 1/f noise in two ways. 1) The mobility fluctuations mechanism becomes the main source of 1/f noise not only on pMOS devices, as usually observed, but also on nMOS devices. 2) A significant increase of the Hooge's parameter is observed for both types of MOSFETs. These experimental findings indicate that bringing the high-κ layer closer to the Si-SiO2 interface enhances the 1/f noise mainly due to mobility fluctuations.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering