Impact of voltage and current stress on TiN/HfSixO y/TiN MIM capacitors

K. Jyothi, A. N. Chandorkar, Durgamadhab Misra

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper we have investigated the long-term reliability of TiN/HfSixOy/TiN Metal-Insulator-Metal (MIM) capacitors by using constant voltage stress (CVS) and constant current stress (CCS). No significant increase in leakage current was observed as a function of stress time. On the other hand stress induced capacitance changes were observed due to change in dielectric constant.

Original languageEnglish (US)
Title of host publicationECS Transactions - Physics and Technology of High-k Gate Dielectrics 7
Pages241-246
Number of pages6
Volume25
Edition6
DOIs
StatePublished - Dec 1 2009
Externally publishedYes
Event7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society - Vienna, Austria
Duration: Oct 5 2009Oct 7 2009

Other

Other7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society
Country/TerritoryAustria
CityVienna
Period10/5/0910/7/09

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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