Implantation and activation of high concentrations of boron and phosphorus in Germanium

Yong Seok Suh, M. S. Carroll, Roland Levy, G. Bisognin, D. De Salvador, M. A. Sahiner

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations


The effect of increasing boron or phosphorus implant dose (i.e., 5×1013-5×1016 cm-2) and subsequent annealing (400-600°C for 3 hrs in N2) on the activation, diffusion and structure of germanium is studied in this work. The peak concentration of implant dose is ∼ 2×1021 cm-3. Secondary ion mass spectrometry (SIMS), spreading resistance profiling (SRP), high resolution X-ray diffraction (HRXRD), X-ray absorption fine structure (XAFS), Rutherford backscattering spectrometry (RBS), and nuclear reaction analysis (NRA) were used to characterize the implant and activation behavior. Boron is found to have a high solid solubility (i.e., ≥ 2×10 20 cm-3), even immediately after implant; while in contrast, phosphorus is limited to ∼1-2×1019 cm -3. Diffusion of phosphorus is also extremely extrinsic, while boron is practically immobile.

Original languageEnglish (US)
Title of host publicationProgress in Semiconductor Materials V - Novel Materials and Electronic and Optoelectronic Applications
Number of pages6
StatePublished - Aug 23 2006
Event2005 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 28 2005Dec 1 2005


Other2005 MRS Fall Meeting
Country/TerritoryUnited States
CityBoston, MA

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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