Implantation and activation of high concentrations of boron and phosphorus in Germanium

Yong Seok Suh; M. S. Carroll; Roland Levy; G. Bisognin; D. De Salvador; M. A. Sahiner

Implantation and activation of high concentrations of boron and phosphorus in Germanium

Yong Seok Suh, M. S. Carroll, Roland Levy, G. Bisognin, D. De Salvador, M. A. Sahiner

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

The effect of increasing boron or phosphorus implant dose (i.e., 5×10¹³-5×10¹⁶ cm^-2) and subsequent annealing (400-600°C for 3 hrs in N₂) on the activation, diffusion and structure of germanium is studied in this work. The peak concentration of implant dose is ∼ 2×10²¹ cm^-3. Secondary ion mass spectrometry (SIMS), spreading resistance profiling (SRP), high resolution X-ray diffraction (HRXRD), X-ray absorption fine structure (XAFS), Rutherford backscattering spectrometry (RBS), and nuclear reaction analysis (NRA) were used to characterize the implant and activation behavior. Boron is found to have a high solid solubility (i.e., ≥ 2×10 ²⁰ cm^-3), even immediately after implant; while in contrast, phosphorus is limited to ∼1-2×10¹⁹ cm ^-3. Diffusion of phosphorus is also extremely extrinsic, while boron is practically immobile.

Original language	English (US)
Title of host publication	Progress in Semiconductor Materials V - Novel Materials and Electronic and Optoelectronic Applications
Pages	303-308
Number of pages	6
Volume	891
State	Published - Aug 23 2006
Event	2005 MRS Fall Meeting - Boston, MA, United States Duration: Nov 28 2005 → Dec 1 2005

Other

Other	2005 MRS Fall Meeting
Country/Territory	United States
City	Boston, MA
Period	11/28/05 → 12/1/05

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@inproceedings{91dcef6460424073a4595f1b0ce07225,

title = "Implantation and activation of high concentrations of boron and phosphorus in Germanium",

abstract = "The effect of increasing boron or phosphorus implant dose (i.e., 5×1013-5×1016 cm-2) and subsequent annealing (400-600°C for 3 hrs in N2) on the activation, diffusion and structure of germanium is studied in this work. The peak concentration of implant dose is ∼ 2×1021 cm-3. Secondary ion mass spectrometry (SIMS), spreading resistance profiling (SRP), high resolution X-ray diffraction (HRXRD), X-ray absorption fine structure (XAFS), Rutherford backscattering spectrometry (RBS), and nuclear reaction analysis (NRA) were used to characterize the implant and activation behavior. Boron is found to have a high solid solubility (i.e., ≥ 2×10 20 cm-3), even immediately after implant; while in contrast, phosphorus is limited to ∼1-2×1019 cm -3. Diffusion of phosphorus is also extremely extrinsic, while boron is practically immobile.",

author = "Suh, {Yong Seok} and Carroll, {M. S.} and Roland Levy and G. Bisognin and {De Salvador}, D. and Sahiner, {M. A.}",

year = "2006",

month = aug,

day = "23",

language = "English (US)",

isbn = "1558998454",

volume = "891",

pages = "303--308",

booktitle = "Progress in Semiconductor Materials V - Novel Materials and Electronic and Optoelectronic Applications",

note = "2005 MRS Fall Meeting ; Conference date: 28-11-2005 Through 01-12-2005",

}

TY - GEN

T1 - Implantation and activation of high concentrations of boron and phosphorus in Germanium

AU - Suh, Yong Seok

AU - Carroll, M. S.

AU - Levy, Roland

AU - Bisognin, G.

AU - De Salvador, D.

AU - Sahiner, M. A.

PY - 2006/8/23

Y1 - 2006/8/23

N2 - The effect of increasing boron or phosphorus implant dose (i.e., 5×1013-5×1016 cm-2) and subsequent annealing (400-600°C for 3 hrs in N2) on the activation, diffusion and structure of germanium is studied in this work. The peak concentration of implant dose is ∼ 2×1021 cm-3. Secondary ion mass spectrometry (SIMS), spreading resistance profiling (SRP), high resolution X-ray diffraction (HRXRD), X-ray absorption fine structure (XAFS), Rutherford backscattering spectrometry (RBS), and nuclear reaction analysis (NRA) were used to characterize the implant and activation behavior. Boron is found to have a high solid solubility (i.e., ≥ 2×10 20 cm-3), even immediately after implant; while in contrast, phosphorus is limited to ∼1-2×1019 cm -3. Diffusion of phosphorus is also extremely extrinsic, while boron is practically immobile.

AB - The effect of increasing boron or phosphorus implant dose (i.e., 5×1013-5×1016 cm-2) and subsequent annealing (400-600°C for 3 hrs in N2) on the activation, diffusion and structure of germanium is studied in this work. The peak concentration of implant dose is ∼ 2×1021 cm-3. Secondary ion mass spectrometry (SIMS), spreading resistance profiling (SRP), high resolution X-ray diffraction (HRXRD), X-ray absorption fine structure (XAFS), Rutherford backscattering spectrometry (RBS), and nuclear reaction analysis (NRA) were used to characterize the implant and activation behavior. Boron is found to have a high solid solubility (i.e., ≥ 2×10 20 cm-3), even immediately after implant; while in contrast, phosphorus is limited to ∼1-2×1019 cm -3. Diffusion of phosphorus is also extremely extrinsic, while boron is practically immobile.

UR - http://www.scopus.com/inward/record.url?scp=33747348412&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33747348412&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:33747348412

SN - 1558998454

SN - 9781558998452

VL - 891

SP - 303

EP - 308

BT - Progress in Semiconductor Materials V - Novel Materials and Electronic and Optoelectronic Applications

T2 - 2005 MRS Fall Meeting

Y2 - 28 November 2005 through 1 December 2005

ER -

Implantation and activation of high concentrations of boron and phosphorus in Germanium

Abstract

Other

All Science Journal Classification (ASJC) codes

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