Abstract
The effect of increasing boron or phosphorus implant dose (i.e., 5×1013-5×1016 cm-2) and subsequent annealing (400-600°C for 3 hrs in N2) on the activation, diffusion and structure of germanium is studied in this work. The peak concentration of implant dose is ∼ 2×1021 cm-3. Secondary ion mass spectrometry (SIMS), spreading resistance profiling (SRP), high resolution X-ray diffraction (HRXRD), X-ray absorption fine structure (XAFS), Rutherford backscattering spectrometry (RBS), and nuclear reaction analysis (NRA) were used to characterize the implant and activation behavior. Boron is found to have a high solid solubility (i.e., ≥ 2×10 20 cm-3), even immediately after implant; while in contrast, phosphorus is limited to ∼1-2×1019 cm -3. Diffusion of phosphorus is also extremely extrinsic, while boron is practically immobile.
Original language | English (US) |
---|---|
Title of host publication | Progress in Semiconductor Materials V - Novel Materials and Electronic and Optoelectronic Applications |
Pages | 303-308 |
Number of pages | 6 |
Volume | 891 |
State | Published - Aug 23 2006 |
Event | 2005 MRS Fall Meeting - Boston, MA, United States Duration: Nov 28 2005 → Dec 1 2005 |
Other
Other | 2005 MRS Fall Meeting |
---|---|
Country/Territory | United States |
City | Boston, MA |
Period | 11/28/05 → 12/1/05 |
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering