Implantation and activation of high concentrations of boron and phosphorus in Germanium

Yong Seok Suh, M. S. Carroll, R. A. Levy, G. Bisognin, D. De Salvador, M. A. Sahiner

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations


The effect of increasing boron or phosphorus implant dose (i.e., 5×1013-5×1016 cm-2) and subsequent annealing (400-600°C for 3 hrs in N2) on the activation, diffusion and structure of germanium is studied in this work. The peak concentration of implant dose is ∼ 2×1021 cm-3. Secondary ion mass spectrometry (SIMS), spreading resistance profiling (SRP), high resolution X-ray diffraction (HRXRD), X-ray absorption fine structure (XAFS), Rutherford backscattering spectrometry (RBS), and nuclear reaction analysis (NRA) were used to characterize the implant and activation behavior. Boron is found to have a high solid solubility (i.e., ≥ 2×10 20 cm-3), even immediately after implant; while in contrast, phosphorus is limited to ∼1-2×1019 cm -3. Diffusion of phosphorus is also extremely extrinsic, while boron is practically immobile.

Original languageEnglish (US)
Title of host publicationProgress in Semiconductor Materials V - Novel Materials and Electronic and Optoelectronic Applications
Number of pages6
StatePublished - 2006
Event2005 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 28 2005Dec 1 2005

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Other2005 MRS Fall Meeting
Country/TerritoryUnited States
CityBoston, MA

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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