Improved dielectric properties and their temperature insensitivity in multilayered Ba0.8Sr0.2TiO3/ZrO2 thin films

S. K. Sahoo; D. Misra; M. Sahoo; C. A. MacDonald; H. Bakhru; D. C. Agrawal; Y. N. Mohapatra; S. B. Majumder; R. S. Katiyar

doi:10.1063/1.3563576

Improved dielectric properties and their temperature insensitivity in multilayered Ba_0.8Sr_0.2TiO₃/ZrO₂ thin films

S. K. Sahoo, D. Misra, M. Sahoo, C. A. MacDonald, H. Bakhru, D. C. Agrawal, Y. N. Mohapatra, S. B. Majumder, R. S. Katiyar

Electrical and Computer Engineering

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Abstract

The electrical and dielectric properties of Ba_0.8Sr _0.2TiO₃ thin films and Ba_0.8Sr _0.2TiO₃/ZrO₂ multilayer thin films deposited on Pt/Ti/SiO₂/Si substrates by sol-gel method are studied. The temperature dependence of the dielectric properties for pure Ba _0.8Sr_0.2TiO₃ film and Ba_0.8Sr _0.2TiO₃/ZrO₂ multilayer films has been studied in the temperature range from 90 to 500 K. Both dielectric constant and dielectric loss exhibit minimal dispersion as a function of temperature in this range. It is observed that dielectric constant, dielectric loss, and tunability are reduced for multilayer thin films. Additionally, the ferroelectricity disappears in multilayer thin films. Our results show that the multilayered Ba_0.8Sr_0.2TiO₃/ZrO₂ design has excellent dielectric properties and they are stable over a broad temperature range (90-500 K), thereby making them excellent candidates for the next generation of enhanced performance temperature stable microwave devices.

Original language	English (US)
Article number	064108
Journal	Journal of Applied Physics
Volume	109
Issue number	6
DOIs	https://doi.org/10.1063/1.3563576
State	Published - Mar 15 2011

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Physics and Astronomy(all)

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@article{2fe22ebe9fda4f2b8e8496d2c4812f83,

title = "Improved dielectric properties and their temperature insensitivity in multilayered Ba0.8Sr0.2TiO3/ZrO2 thin films",

abstract = "The electrical and dielectric properties of Ba0.8Sr 0.2TiO3 thin films and Ba0.8Sr 0.2TiO3/ZrO2 multilayer thin films deposited on Pt/Ti/SiO2/Si substrates by sol-gel method are studied. The temperature dependence of the dielectric properties for pure Ba 0.8Sr0.2TiO3 film and Ba0.8Sr 0.2TiO3/ZrO2 multilayer films has been studied in the temperature range from 90 to 500 K. Both dielectric constant and dielectric loss exhibit minimal dispersion as a function of temperature in this range. It is observed that dielectric constant, dielectric loss, and tunability are reduced for multilayer thin films. Additionally, the ferroelectricity disappears in multilayer thin films. Our results show that the multilayered Ba0.8Sr0.2TiO3/ZrO2 design has excellent dielectric properties and they are stable over a broad temperature range (90-500 K), thereby making them excellent candidates for the next generation of enhanced performance temperature stable microwave devices.",

author = "Sahoo, {S. K.} and D. Misra and M. Sahoo and MacDonald, {C. A.} and H. Bakhru and Agrawal, {D. C.} and Mohapatra, {Y. N.} and Majumder, {S. B.} and Katiyar, {R. S.}",

note = "Funding Information: The authors would like to thank for the support from the National Renewable Energy Laboratory, Golden, Colorado 80401, USA.",

year = "2011",

month = mar,

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doi = "10.1063/1.3563576",

language = "English (US)",

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T1 - Improved dielectric properties and their temperature insensitivity in multilayered Ba0.8Sr0.2TiO3/ZrO2 thin films

AU - Sahoo, S. K.

AU - Misra, D.

AU - Sahoo, M.

AU - MacDonald, C. A.

AU - Bakhru, H.

AU - Agrawal, D. C.

AU - Mohapatra, Y. N.

AU - Majumder, S. B.

AU - Katiyar, R. S.

N1 - Funding Information: The authors would like to thank for the support from the National Renewable Energy Laboratory, Golden, Colorado 80401, USA.

PY - 2011/3/15

Y1 - 2011/3/15

N2 - The electrical and dielectric properties of Ba0.8Sr 0.2TiO3 thin films and Ba0.8Sr 0.2TiO3/ZrO2 multilayer thin films deposited on Pt/Ti/SiO2/Si substrates by sol-gel method are studied. The temperature dependence of the dielectric properties for pure Ba 0.8Sr0.2TiO3 film and Ba0.8Sr 0.2TiO3/ZrO2 multilayer films has been studied in the temperature range from 90 to 500 K. Both dielectric constant and dielectric loss exhibit minimal dispersion as a function of temperature in this range. It is observed that dielectric constant, dielectric loss, and tunability are reduced for multilayer thin films. Additionally, the ferroelectricity disappears in multilayer thin films. Our results show that the multilayered Ba0.8Sr0.2TiO3/ZrO2 design has excellent dielectric properties and they are stable over a broad temperature range (90-500 K), thereby making them excellent candidates for the next generation of enhanced performance temperature stable microwave devices.

AB - The electrical and dielectric properties of Ba0.8Sr 0.2TiO3 thin films and Ba0.8Sr 0.2TiO3/ZrO2 multilayer thin films deposited on Pt/Ti/SiO2/Si substrates by sol-gel method are studied. The temperature dependence of the dielectric properties for pure Ba 0.8Sr0.2TiO3 film and Ba0.8Sr 0.2TiO3/ZrO2 multilayer films has been studied in the temperature range from 90 to 500 K. Both dielectric constant and dielectric loss exhibit minimal dispersion as a function of temperature in this range. It is observed that dielectric constant, dielectric loss, and tunability are reduced for multilayer thin films. Additionally, the ferroelectricity disappears in multilayer thin films. Our results show that the multilayered Ba0.8Sr0.2TiO3/ZrO2 design has excellent dielectric properties and they are stable over a broad temperature range (90-500 K), thereby making them excellent candidates for the next generation of enhanced performance temperature stable microwave devices.

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Improved dielectric properties and their temperature insensitivity in multilayered Ba_0.8Sr_0.2TiO₃/ZrO₂ thin films

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