Improved dislocation model for silicon solar cells: Calculation of dark current

Vinay Budhreja, B. Sopori, N. M. Ravindra, D. Misra

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have extended a previous dislocation model to include the effect of front and back surface recombination velocities in a silicon solar cell. This improved dislocation model uses Green's Function approach to solve three dimensional continuity equation in p and n layer of solar cell. Expressions for saturation current components are derived for different dislocation densities and compared with published experimental results. The modeling results also show the variation of cell parameters with dislocation density.

Original languageEnglish (US)
Title of host publication39th IEEE Photovoltaic Specialists Conference, PVSC 2013
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages61-67
Number of pages7
ISBN (Electronic)9781479905126
DOIs
StatePublished - Aug 4 2015
Event39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, United States
Duration: Jun 16 2013Jun 21 2013

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
Volume2015-August
ISSN (Print)0160-8371

Other

Other39th IEEE Photovoltaic Specialists Conference, PVSC 2013
CountryUnited States
CityTampa
Period6/16/136/21/13

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Keywords

  • Continuity equation
  • Green's function
  • dislocation
  • modeling
  • multicrystalline silicon

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