@inproceedings{c04c0eeba4484e029aa8b50f60414b02,
title = "Improved dislocation model for silicon solar cells: Calculation of dark current",
abstract = "We have extended a previous dislocation model to include the effect of front and back surface recombination velocities in a silicon solar cell. This improved dislocation model uses Green's Function approach to solve three dimensional continuity equation in p and n layer of solar cell. Expressions for saturation current components are derived for different dislocation densities and compared with published experimental results. The modeling results also show the variation of cell parameters with dislocation density.",
keywords = "Continuity equation, Green's function, dislocation, modeling, multicrystalline silicon",
author = "Vinay Budhreja and B. Sopori and Ravindra, {N. M.} and D. Misra",
note = "Publisher Copyright: {\textcopyright} 2013 IEEE.; 39th IEEE Photovoltaic Specialists Conference, PVSC 2013 ; Conference date: 16-06-2013 Through 21-06-2013",
year = "2015",
month = aug,
day = "4",
doi = "10.1109/PVSC-Vol2.2013.7179249",
language = "English (US)",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "61--67",
booktitle = "39th IEEE Photovoltaic Specialists Conference, PVSC 2013",
address = "United States",
}