Improved dislocation model of silicon solar cells with the effect of front and back surface recombination velocity

Vinay Budhraja, Bhushan Sopori, Nuggehalli Ravindra, Durgamadhab Misra

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We have extended a previous model for calculating the effects of dislocations on the characteristics of a Si solar cell to include the effects of front and back surface recombination. This improved dislocation model uses Green's function approach to solve the three-dimensional continuity equation of the minority carriers with suitable boundary conditions corresponding to surface recombination at the n and p sides. The dislocations are considered to be localized lines, extending perpendicular to the front and back surfaces of the cell and having a recombination velocity. We discuss effect of several parameters such as bulk dislocation density, minority carrier diffusion length in p and n regions on the J-V characteristics, and spectral response of the cell. It is shown that these results agree well with previously published, experimental data.

Original languageEnglish (US)
Pages (from-to)1256-1266
Number of pages11
JournalProgress in Photovoltaics: Research and Applications
Volume22
Issue number12
DOIs
StatePublished - Dec 1 2014

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Keywords

  • Si solar cells
  • dislocations

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