Keyphrases
Nanostructures
100%
Indium Gallium Nitride (InGaN)
100%
Dot-in-a-wire
100%
Emission Properties
100%
Flowing Afterglow
100%
N2 Plasma
100%
GaN Nanowires
75%
Heterostructure
25%
Photoluminescence Spectroscopy
25%
Near-surface Region
25%
Passivation
25%
Absorption Edge
25%
Band-edge Emission
25%
Photoluminescence Excitation
25%
Plasma-induced
25%
Nonradiative Recombination Center
25%
Dynamic Annealing
25%
N Atoms
25%
Ion-induced Damage
25%
Defect Annealing
25%
Grown-in Defects
25%
Engineering
Nanowires
100%
Defects
33%
Radiative Recombination
33%
Heterostructures
33%
Passivation
33%
Surface Region
33%
Band Edge
33%
Absorption Edge
33%
Recombination Centre
33%
Generated Plasma
33%
Induced Damage
33%
Induced Shift
33%
Earth and Planetary Sciences
Emissions
100%
Nanowire
100%
Afterglow
100%
Photoluminescence
66%
Radiative Recombination
33%
Near-Surface Geology
33%
Material Science
Nanocrystalline Material
100%
Nanowire
100%
Photoluminescence
66%
Heterojunction
33%
Annealing
33%
Immunology and Microbiology
Blood Plasma
100%
Photoluminescence
66%
Absorption
33%
Surface Property
33%