Improving carrier transport in AlGaN deep-ultraviolet light-emitting diodes using a strip-in-a-barrier structure

Ravi Teja Velpula; Barsha Jain; Ha Quoc Thang Bui; Fatemeh Mohammadi Shakiba; Jeffrey Jude; Moses Tumuna; Hoang Duy Nguyen; Trupti Ranjan Lenka; Hieu Pham Trung Nguyen

doi:10.1364/AO.394149

Improving carrier transport in AlGaN deep-ultraviolet light-emitting diodes using a strip-in-a-barrier structure

Ravi Teja Velpula, Barsha Jain, Ha Quoc Thang Bui, Fatemeh Mohammadi Shakiba, Jeffrey Jude, Moses Tumuna, Hoang Duy Nguyen, Trupti Ranjan Lenka, Hieu Pham Trung Nguyen

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

This paper reports the illustration of electron blocking layer (EBL)-free AlGaN light-emitting diodes (LEDs) operating in the deep-ultraviolet (DUV) wavelength at ∼270 nm. In this work, we demonstrated that the integration of an optimized thin undoped AlGaN strip layer in the middle of the last quantum barrier (LQB) could generate enough conduction band barrier height for the effectively reduced electron overflow into the p-GaN region. Moreover, the hole injection into the multi-quantum-well active region is significantly increased due to a large hole accumulation at the interface of the AlGaN strip and the LQB. As a result, the internal quantum efficiency and output power of the proposed LED structure has been enhanced tremendously compared to that of the conventional p-type EBL-based LED structure.

Original language	English (US)
Pages (from-to)	5276-5281
Number of pages	6
Journal	Applied Optics
Volume	59
Issue number	17
DOIs	https://doi.org/10.1364/AO.394149
State	Published - Jun 10 2020

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Engineering (miscellaneous)
Electrical and Electronic Engineering

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10.1364/AO.394149

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@article{29e784a1c5e841c7b2491d16887f1b1c,

title = "Improving carrier transport in AlGaN deep-ultraviolet light-emitting diodes using a strip-in-a-barrier structure",

abstract = "This paper reports the illustration of electron blocking layer (EBL)-free AlGaN light-emitting diodes (LEDs) operating in the deep-ultraviolet (DUV) wavelength at ∼270 nm. In this work, we demonstrated that the integration of an optimized thin undoped AlGaN strip layer in the middle of the last quantum barrier (LQB) could generate enough conduction band barrier height for the effectively reduced electron overflow into the p-GaN region. Moreover, the hole injection into the multi-quantum-well active region is significantly increased due to a large hole accumulation at the interface of the AlGaN strip and the LQB. As a result, the internal quantum efficiency and output power of the proposed LED structure has been enhanced tremendously compared to that of the conventional p-type EBL-based LED structure.",

author = "Velpula, {Ravi Teja} and Barsha Jain and Bui, {Ha Quoc Thang} and Shakiba, {Fatemeh Mohammadi} and Jeffrey Jude and Moses Tumuna and Nguyen, {Hoang Duy} and Lenka, {Trupti Ranjan} and Nguyen, {Hieu Pham Trung}",

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doi = "10.1364/AO.394149",

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T1 - Improving carrier transport in AlGaN deep-ultraviolet light-emitting diodes using a strip-in-a-barrier structure

AU - Velpula, Ravi Teja

AU - Jain, Barsha

AU - Bui, Ha Quoc Thang

AU - Shakiba, Fatemeh Mohammadi

AU - Jude, Jeffrey

AU - Tumuna, Moses

AU - Nguyen, Hoang Duy

AU - Lenka, Trupti Ranjan

AU - Nguyen, Hieu Pham Trung

PY - 2020/6/10

Y1 - 2020/6/10

N2 - This paper reports the illustration of electron blocking layer (EBL)-free AlGaN light-emitting diodes (LEDs) operating in the deep-ultraviolet (DUV) wavelength at ∼270 nm. In this work, we demonstrated that the integration of an optimized thin undoped AlGaN strip layer in the middle of the last quantum barrier (LQB) could generate enough conduction band barrier height for the effectively reduced electron overflow into the p-GaN region. Moreover, the hole injection into the multi-quantum-well active region is significantly increased due to a large hole accumulation at the interface of the AlGaN strip and the LQB. As a result, the internal quantum efficiency and output power of the proposed LED structure has been enhanced tremendously compared to that of the conventional p-type EBL-based LED structure.

AB - This paper reports the illustration of electron blocking layer (EBL)-free AlGaN light-emitting diodes (LEDs) operating in the deep-ultraviolet (DUV) wavelength at ∼270 nm. In this work, we demonstrated that the integration of an optimized thin undoped AlGaN strip layer in the middle of the last quantum barrier (LQB) could generate enough conduction band barrier height for the effectively reduced electron overflow into the p-GaN region. Moreover, the hole injection into the multi-quantum-well active region is significantly increased due to a large hole accumulation at the interface of the AlGaN strip and the LQB. As a result, the internal quantum efficiency and output power of the proposed LED structure has been enhanced tremendously compared to that of the conventional p-type EBL-based LED structure.

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Improving carrier transport in AlGaN deep-ultraviolet light-emitting diodes using a strip-in-a-barrier structure

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