Improving carrier transport in AlGaN deep-ultraviolet light-emitting diodes using a strip-in-a-barrier structure

Ravi Teja Velpula, Barsha Jain, Ha Quoc Thang Bui, Fatemeh Mohammadi Shakiba, Jeffrey Jude, Moses Tumuna, Hoang Duy Nguyen, Trupti Ranjan Lenka, Hieu Pham Trung Nguyen

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

This paper reports the illustration of electron blocking layer (EBL)-free AlGaN light-emitting diodes (LEDs) operating in the deep-ultraviolet (DUV) wavelength at ∼270 nm. In this work, we demonstrated that the integration of an optimized thin undoped AlGaN strip layer in the middle of the last quantum barrier (LQB) could generate enough conduction band barrier height for the effectively reduced electron overflow into the p-GaN region. Moreover, the hole injection into the multi-quantum-well active region is significantly increased due to a large hole accumulation at the interface of the AlGaN strip and the LQB. As a result, the internal quantum efficiency and output power of the proposed LED structure has been enhanced tremendously compared to that of the conventional p-type EBL-based LED structure.

Original languageEnglish (US)
Pages (from-to)5276-5281
Number of pages6
JournalApplied Optics
Volume59
Issue number17
DOIs
StatePublished - Jun 10 2020

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Engineering (miscellaneous)
  • Electrical and Electronic Engineering

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