@inproceedings{059a308c9daa4f459a025552983f4196,
title = "In-Memory Computing with Spintronic Devices",
abstract = "In-Memory computing has drawn many attentions as a promising solution to reduce massive power hungry data traffic between computing and memory units, leading to significant improvement of entire system performance and energy efficiency. Emerging spintronic device based non-volatile memory is becoming a next-generation universal memory candidate due to its non-volatility, zero leakage power in un-accessed bit-cell, high integration density, excellent endurance and compatibility with CMOS fabrication technology. In this paper, we present that different spintronic devices based memory, including spin-orbit torque magnetic random access memory (SOT-MRAM), domain wall motion memory, magnetic racetrack memory, could be leveraged to implement logic functions within memory without add-on logic circuits. As a case study, we employ Advanced Encryption Standard (AES) algorithm to elucidate the efficiency of such in-memory computing based on spintronic memory.",
keywords = "Domain Wall Memory, In-Memory Computing, In-Memory Data Encryption, Racetrack Memory, SOT-MRAM",
author = "Deliang Fan and Shaahin Angizi and Zhezhi He",
note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 2017 IEEE Computer Society Annual Symposium on VLSI, ISVLSI 2017 ; Conference date: 03-07-2017 Through 05-07-2017",
year = "2017",
month = jul,
day = "20",
doi = "10.1109/ISVLSI.2017.116",
language = "English (US)",
series = "Proceedings of IEEE Computer Society Annual Symposium on VLSI, ISVLSI",
publisher = "IEEE Computer Society",
pages = "683--688",
editor = "Ricardo Reis and Mircea Stan and Michael Huebner and Nikolaos Voros",
booktitle = "Proceedings - 2017 IEEE Computer Society Annual Symposium on VLSI, ISVLSI 2017",
address = "United States",
}