In situ epitaxial growth of Y1Ba2Cu3O 7-x films by molecular beam epitaxy with an activated oxygen source

J. Kwo, M. Hong, D. J. Trevor, R. M. Fleming, A. E. White, R. C. Farrow, A. R. Kortan, K. T. Short

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Highly oriented, epitaxial Y1Ba2Cu3O 7-x thin films were prepared on MgO(100) by molecular beam epitaxy at a substrate temperature of 550-600°C. The in situ growth was achieved by incorporating reactive oxygen species produced by a remote microwave plasma in a flow-tube reactor. The epitaxial (001) orientation is demonstrated by x-ray diffraction and ion channeling. In situ reflection high-energy electron diffraction showed that a layer-by-layer growth has produced a well-ordered, atomically smooth surface in the as-grown tetragonal phase of an oxygen stoichiometry of 6.2-6.3. A 500°C anneal in 1 atm of O2 converted the oxygen content to 6.7 to 6.8. Typical superconducting transport properties of an Y1Ba2Cu3O7-x film 1000 Å thick are ρ(300 K)=325 μΩ cm, ρ(300 K)/ρ(100 K)=2.4, Tc(onset)=92 K, and Tc(R=0)=82 K. The transport J c at 75 K is 1×105 A/cm2, and increases to 1×106 A/cm2 at 70 K.

Original languageEnglish (US)
Pages (from-to)2683-2685
Number of pages3
JournalApplied Physics Letters
Issue number26
StatePublished - 1988

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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