In-Source Ai-0.5%Cu Metallization for CMOS Devices

Keyphrases

• Wafer 100%
• Electromigration 100%
• CMOS Devices 100%
• Design Rules 100%
• Failure Time 100%
• Sintering Temperature 100%
• Median Time 100%
• Evaporated Al 100%
• Cu Metallization 100%
• Radiation-free 100%
• Device Operation 50%
• Transistor 50%
• Narrow Linewidth 50%
• Contact Resistance 50%
• Processing Conditions 50%
• Metallization 50%
• N-channel 50%
• P-channel 50%
• Thermal Cycling 50%
• Operation Conditions 50%
• Shift-or 50%
• Cu Line 50%
• P Diffusion 50%
• Passivation Coating 50%
• SiN Passivation 50%
• Interface Fixed Charge 50%
• Free Offer 50%
• Threshold Shift 50%
• Well-behaved 50%
• High-temperature Sintering 50%

Engineering

• Electromigration 100%
• Metallizations 100%
• Design Rule 100%
• Sintering Temperature 100%
• Passivation 50%
• Channel Device 50%
• Processing Condition 50%
• High-Temperature Sintering 50%
• Thermal Cycle 50%

Material Science

• Sintering Temperature 100%
• Linewidth 33%
• Contact Resistance 33%
• Transistor 33%