Inelastic light scattering spectroscopy in Si/SiGe nanostructures: Strain, chemical composition and thermal properties

L. Tsybeskov, S. A. Mala, X. Wang, J. M. Baribeau, X. Wu, D. J. Lockwood

Research output: Contribution to journalReview articlepeer-review

1 Scopus citations

Abstract

We present a review of recent studies of inelastic light scattering spectroscopy in two types of Si/SiGe nanostructures: planar superlattices and cluster (dot) multilayers including first- and second-order Raman scattering, polarized Raman scattering and low-frequency inelastic light scattering associated with folded acoustic phonons. The results are used in semi-quantitative analysis of chemical composition, strain and thermal conductivity in these technologically important materials for electronic and optoelectronic devices.

Original languageEnglish (US)
Pages (from-to)25-30
Number of pages6
JournalSolid State Communications
Volume245
DOIs
StatePublished - Nov 1 2016

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Keywords

  • A. Nanostructures
  • B. Molecular beam epitaxy
  • D. Inelastic light scattering
  • E. Raman scattering

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