Inelastic light scattering spectroscopy in Si/SiGe nanostructures: Strain, chemical composition and thermal properties

L. Tsybeskov; S. A. Mala; X. Wang; J. M. Baribeau; X. Wu; D. J. Lockwood

doi:10.1016/j.ssc.2016.07.008

Inelastic light scattering spectroscopy in Si/SiGe nanostructures: Strain, chemical composition and thermal properties

L. Tsybeskov, S. A. Mala, X. Wang, J. M. Baribeau, X. Wu, D. J. Lockwood

Electrical and Computer Engineering

Research output: Contribution to journal › Review article › peer-review

1 Scopus citations

Abstract

We present a review of recent studies of inelastic light scattering spectroscopy in two types of Si/SiGe nanostructures: planar superlattices and cluster (dot) multilayers including first- and second-order Raman scattering, polarized Raman scattering and low-frequency inelastic light scattering associated with folded acoustic phonons. The results are used in semi-quantitative analysis of chemical composition, strain and thermal conductivity in these technologically important materials for electronic and optoelectronic devices.

Original language	English (US)
Pages (from-to)	25-30
Number of pages	6
Journal	Solid State Communications
Volume	245
DOIs	https://doi.org/10.1016/j.ssc.2016.07.008
State	Published - Nov 1 2016

All Science Journal Classification (ASJC) codes

General Chemistry
Condensed Matter Physics
Materials Chemistry

Keywords

A. Nanostructures
B. Molecular beam epitaxy
D. Inelastic light scattering
E. Raman scattering

Access to Document

10.1016/j.ssc.2016.07.008

Cite this

@article{01fd1835e1ea49e8a8132aa55e2744d9,

title = "Inelastic light scattering spectroscopy in Si/SiGe nanostructures: Strain, chemical composition and thermal properties",

abstract = "We present a review of recent studies of inelastic light scattering spectroscopy in two types of Si/SiGe nanostructures: planar superlattices and cluster (dot) multilayers including first- and second-order Raman scattering, polarized Raman scattering and low-frequency inelastic light scattering associated with folded acoustic phonons. The results are used in semi-quantitative analysis of chemical composition, strain and thermal conductivity in these technologically important materials for electronic and optoelectronic devices.",

keywords = "A. Nanostructures, B. Molecular beam epitaxy, D. Inelastic light scattering, E. Raman scattering",

author = "L. Tsybeskov and Mala, {S. A.} and X. Wang and Baribeau, {J. M.} and X. Wu and Lockwood, {D. J.}",

note = "Publisher Copyright: {\textcopyright} 2016 Elsevier Ltd",

year = "2016",

month = nov,

day = "1",

doi = "10.1016/j.ssc.2016.07.008",

language = "English (US)",

volume = "245",

pages = "25--30",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd",

}

TY - JOUR

T1 - Inelastic light scattering spectroscopy in Si/SiGe nanostructures

T2 - Strain, chemical composition and thermal properties

AU - Tsybeskov, L.

AU - Mala, S. A.

AU - Wang, X.

AU - Baribeau, J. M.

AU - Wu, X.

AU - Lockwood, D. J.

PY - 2016/11/1

Y1 - 2016/11/1

N2 - We present a review of recent studies of inelastic light scattering spectroscopy in two types of Si/SiGe nanostructures: planar superlattices and cluster (dot) multilayers including first- and second-order Raman scattering, polarized Raman scattering and low-frequency inelastic light scattering associated with folded acoustic phonons. The results are used in semi-quantitative analysis of chemical composition, strain and thermal conductivity in these technologically important materials for electronic and optoelectronic devices.

AB - We present a review of recent studies of inelastic light scattering spectroscopy in two types of Si/SiGe nanostructures: planar superlattices and cluster (dot) multilayers including first- and second-order Raman scattering, polarized Raman scattering and low-frequency inelastic light scattering associated with folded acoustic phonons. The results are used in semi-quantitative analysis of chemical composition, strain and thermal conductivity in these technologically important materials for electronic and optoelectronic devices.

KW - A. Nanostructures

KW - B. Molecular beam epitaxy

KW - D. Inelastic light scattering

KW - E. Raman scattering

UR - http://www.scopus.com/inward/record.url?scp=84979026108&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84979026108&partnerID=8YFLogxK

U2 - 10.1016/j.ssc.2016.07.008

DO - 10.1016/j.ssc.2016.07.008

M3 - Review article

AN - SCOPUS:84979026108

SN - 0038-1098

VL - 245

SP - 25

EP - 30

JO - Solid State Communications

JF - Solid State Communications

ER -

Inelastic light scattering spectroscopy in Si/SiGe nanostructures: Strain, chemical composition and thermal properties

Abstract

All Science Journal Classification (ASJC) codes

Keywords

Access to Document

Other files and links

Fingerprint

Cite this