We present a review of recent studies of inelastic light scattering spectroscopy in two types of Si/SiGe nanostructures: planar superlattices and cluster (dot) multilayers including first- and second-order Raman scattering, polarized Raman scattering and low-frequency inelastic light scattering associated with folded acoustic phonons. The results are used in semi-quantitative analysis of chemical composition, strain and thermal conductivity in these technologically important materials for electronic and optoelectronic devices.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Materials Chemistry
- A. Nanostructures
- B. Molecular beam epitaxy
- D. Inelastic light scattering
- E. Raman scattering