Inelastic scattering of hot electrons by neutral donors in heavily silicon-doped GaAs/AIAs quantum wells

I. A. Akimov; V. F. Sapega; D. N. Mirlin; B. P. Zakharchenya; V. M. Ustinov; A. E. Zhukov; A. Yu Egorov; A. A. Sirenko

doi:10.1134/1.1187880

Inelastic scattering of hot electrons by neutral donors in heavily silicon-doped GaAs/AIAs quantum wells

I. A. Akimov, V. F. Sapega, D. N. Mirlin, B. P. Zakharchenya, V. M. Ustinov, A. E. Zhukov, A. Yu Egorov, A. A. Sirenko

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1 Scopus citations

Abstract

The energy and momentum relaxation of hot electrons in n-type GaAs/AIAs quantum wells is studied. Hot photoluminescence due to the recombination of hot electrons with holes bound on Si acceptors is observed in structures with a high level of doping with silicon. Using the method of magnetic depolarization of hot photoluminescence, the probability of scattering of hot electrons is found to decrease substantially with increasing temperature in the range 4-80 K. This effect is shown to be due to the ionization of donors. It is established that the probability of inelastic scattering by neutral donors is several times greater than the probability of quasielastic electron-electron scattering.

Original language	English (US)
Pages (from-to)	1124-1127
Number of pages	4
Journal	Semiconductors
Volume	33
Issue number	10
DOIs	https://doi.org/10.1134/1.1187880
State	Published - Oct 1999
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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@article{67446abaf0394c1faf58ca158587bd43,

title = "Inelastic scattering of hot electrons by neutral donors in heavily silicon-doped GaAs/AIAs quantum wells",

abstract = "The energy and momentum relaxation of hot electrons in n-type GaAs/AIAs quantum wells is studied. Hot photoluminescence due to the recombination of hot electrons with holes bound on Si acceptors is observed in structures with a high level of doping with silicon. Using the method of magnetic depolarization of hot photoluminescence, the probability of scattering of hot electrons is found to decrease substantially with increasing temperature in the range 4-80 K. This effect is shown to be due to the ionization of donors. It is established that the probability of inelastic scattering by neutral donors is several times greater than the probability of quasielastic electron-electron scattering.",

author = "Akimov, {I. A.} and Sapega, {V. F.} and Mirlin, {D. N.} and Zakharchenya, {B. P.} and Ustinov, {V. M.} and Zhukov, {A. E.} and Egorov, {A. Yu} and Sirenko, {A. A.}",

year = "1999",

month = oct,

doi = "10.1134/1.1187880",

language = "English (US)",

volume = "33",

pages = "1124--1127",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "Maik Nauka-Interperiodica Publishing",

number = "10",

}

TY - JOUR

T1 - Inelastic scattering of hot electrons by neutral donors in heavily silicon-doped GaAs/AIAs quantum wells

AU - Akimov, I. A.

AU - Sapega, V. F.

AU - Mirlin, D. N.

AU - Zakharchenya, B. P.

AU - Ustinov, V. M.

AU - Zhukov, A. E.

AU - Egorov, A. Yu

AU - Sirenko, A. A.

PY - 1999/10

Y1 - 1999/10

N2 - The energy and momentum relaxation of hot electrons in n-type GaAs/AIAs quantum wells is studied. Hot photoluminescence due to the recombination of hot electrons with holes bound on Si acceptors is observed in structures with a high level of doping with silicon. Using the method of magnetic depolarization of hot photoluminescence, the probability of scattering of hot electrons is found to decrease substantially with increasing temperature in the range 4-80 K. This effect is shown to be due to the ionization of donors. It is established that the probability of inelastic scattering by neutral donors is several times greater than the probability of quasielastic electron-electron scattering.

AB - The energy and momentum relaxation of hot electrons in n-type GaAs/AIAs quantum wells is studied. Hot photoluminescence due to the recombination of hot electrons with holes bound on Si acceptors is observed in structures with a high level of doping with silicon. Using the method of magnetic depolarization of hot photoluminescence, the probability of scattering of hot electrons is found to decrease substantially with increasing temperature in the range 4-80 K. This effect is shown to be due to the ionization of donors. It is established that the probability of inelastic scattering by neutral donors is several times greater than the probability of quasielastic electron-electron scattering.

UR - http://www.scopus.com/inward/record.url?scp=0033212225&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033212225&partnerID=8YFLogxK

U2 - 10.1134/1.1187880

DO - 10.1134/1.1187880

M3 - Article

AN - SCOPUS:0033212225

SN - 1063-7826

VL - 33

SP - 1124

EP - 1127

JO - Semiconductors

JF - Semiconductors

IS - 10

ER -

Inelastic scattering of hot electrons by neutral donors in heavily silicon-doped GaAs/AIAs quantum wells

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