Influence of gas ambient on the synthesis of co-doped ZnO:(Al,N) films for photoelectrochemical water splitting

Sudhakar Shet, Kwang Soon Ahn, Todd Deutsch, Heli Wang, Ravindra Nuggehalli, Yanfa Yan, John Turner, Mowafak Al-Jassim

Research output: Contribution to journalArticlepeer-review

57 Scopus citations

Abstract

Al and N co-doped ZnO thin films, ZnO:(Al,N), are synthesized by radio-frequency magnetron sputtering in mixed Ar and N2 and mixed O2 and N2 gas ambient at 100 °C. The ZnO:(Al,N) films deposited in mixed Ar and N2 gas ambient did not incorporate N, whereas ZnO:(Al,N) films grown in mixed O2 and N2 gas ambient showed enhanced N incorporation and crystallinity as compared to ZnO:N thin films grown in the same gas ambient. As a result, ZnO:(Al,N) films grown in mixed O2 and N2 gas ambient showed higher photocurrents than the ZnO:(Al,N) thin films deposited in mixed Ar and N2 gas ambient. Our results indicate that the gas ambient plays an important role in N incorporation and crystallinity control in Al and N co-doped ZnO thin films.

Original languageEnglish (US)
Pages (from-to)5801-5805
Number of pages5
JournalJournal of Power Sources
Volume195
Issue number17
DOIs
StatePublished - Sep 1 2010

All Science Journal Classification (ASJC) codes

  • Renewable Energy, Sustainability and the Environment
  • Energy Engineering and Power Technology
  • Physical and Theoretical Chemistry
  • Electrical and Electronic Engineering

Keywords

  • Bandgap
  • Co-doping
  • Gas ambient
  • Photoelectrochemical
  • ZnO
  • ZnO:(Al,N)

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