ZnO thin films have been deposited in mixed Ar/N 2 gas ambient at substrate temperature of 500°C by radiofrequency sputtering of ZnO targets. We find that an optimum N 2-to-Ar ratio in the deposition ambient promotes the formation of well-aligned nanorods. ZnO thin films grown in ambient with 25% N 2 gas flow rate promoted nanorods aligned along c-axis and exhibit significantly enhanced photoelectrochemical (PEC) response, compared with ZnO thin films grown in an ambient with different N 2-to-Ar gas flow ratios. Our results suggest that chamber ambient is critical for the formation of aligned nanostructures, which offer potential advantages for improving the efficiency of PEC water splitting for H2 production.
|Original language||English (US)|
|Number of pages||5|
|State||Published - Apr 2012|
All Science Journal Classification (ASJC) codes
- Materials Science(all)