@inproceedings{2956f92fc2ed446d9de2c0cacda42e27,
title = "Influence of InGaN Quantum Disk Thickness on the Optical Properties of GaN Nanowires",
abstract = "The optical emission properties of axial InGaN/GaN nanowires with different InGaN quantum disk (Qdisk) thicknesses are experimentally investigated using a combination of photoluminescence (PL) and cathodoluminescence (CL) spectroscopy. Both the spectroscopic measurements from the average InGaN Qdisk-related emissions reveal the presence of built-in piezoelectric strain as evidenced by the luminescence blueshift with increasing pump signal. To determine the material compositions and their spatial uniformity, transmission electron microscopy with energy-dispersive x-ray spectroscopy were also performed. Systematic analysis of the optical emission properties with the change of Qdisk thickness serves to advance the understanding of, in general, III-nitride nanostructures for the implementation of classical and non-classical optoelectronic devices.",
keywords = "InGaN, MBE, Nanowire",
author = "Hasan, {Syed M.N.} and Arnob Ghosh and Sadaf, {Sharif Md} and Shamsul Arafin",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 Compound Semiconductor Week, CSW 2022 ; Conference date: 01-06-2022 Through 03-06-2022",
year = "2022",
doi = "10.1109/CSW55288.2022.9930390",
language = "English (US)",
series = "2022 Compound Semiconductor Week, CSW 2022",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2022 Compound Semiconductor Week, CSW 2022",
address = "United States",
}