Influence of InGaN Quantum Disk Thickness on the Optical Properties of GaN Nanowires

Syed M.N. Hasan, Arnob Ghosh, Sharif Md Sadaf, Shamsul Arafin

Research output: Chapter in Book/Report/Conference proceedingConference contribution


The optical emission properties of axial InGaN/GaN nanowires with different InGaN quantum disk (Qdisk) thicknesses are experimentally investigated using a combination of photoluminescence (PL) and cathodoluminescence (CL) spectroscopy. Both the spectroscopic measurements from the average InGaN Qdisk-related emissions reveal the presence of built-in piezoelectric strain as evidenced by the luminescence blueshift with increasing pump signal. To determine the material compositions and their spatial uniformity, transmission electron microscopy with energy-dispersive x-ray spectroscopy were also performed. Systematic analysis of the optical emission properties with the change of Qdisk thickness serves to advance the understanding of, in general, III-nitride nanostructures for the implementation of classical and non-classical optoelectronic devices.

Original languageEnglish (US)
Title of host publication2022 Compound Semiconductor Week, CSW 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665453400
StatePublished - 2022
Externally publishedYes
Event2022 Compound Semiconductor Week, CSW 2022 - Ann Arbor, United States
Duration: Jun 1 2022Jun 3 2022

Publication series

Name2022 Compound Semiconductor Week, CSW 2022


Conference2022 Compound Semiconductor Week, CSW 2022
Country/TerritoryUnited States
CityAnn Arbor

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics


  • InGaN
  • MBE
  • Nanowire


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