TY - GEN
T1 - Influence of Prestrained Graded InGaN interlayer on the Optical Characteristics of InGaN/GaN MQW-based LEDs
AU - Das, Samadrita
AU - Lenka, Trupti Ranjan
AU - Talukdar, Fazal Ahmed
AU - Velpula, Ravi Teja
AU - Nguyen, Hieu Pham Trung
AU - Crupi, Giovanni
N1 - Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - In this work, an InGaN/GaN multi-quantum well light emitting diode is designed with different kinds of prestrain layers (InGaN) inserted between the active region and n-GaN layer to demonstrate the effects of piezoelectric polarization on GaN-based LEDs. The device describes a GaN buffer layer which promotes charge injection by minimizing energy barrier between electrode and active layers. Compared to the conventional LED, more than 48.47% enhancement in the efficiency of the LED with prestrain layer can be observed which is attributed to the reduction of polarization field within MQW regions. The proposed device attains a high-efficiency of 81.94%, and minimized efficiency droop of 3.848% at an injection current of 10 mA with 16% In composition and has high-luminous power in the spectral range.
AB - In this work, an InGaN/GaN multi-quantum well light emitting diode is designed with different kinds of prestrain layers (InGaN) inserted between the active region and n-GaN layer to demonstrate the effects of piezoelectric polarization on GaN-based LEDs. The device describes a GaN buffer layer which promotes charge injection by minimizing energy barrier between electrode and active layers. Compared to the conventional LED, more than 48.47% enhancement in the efficiency of the LED with prestrain layer can be observed which is attributed to the reduction of polarization field within MQW regions. The proposed device attains a high-efficiency of 81.94%, and minimized efficiency droop of 3.848% at an injection current of 10 mA with 16% In composition and has high-luminous power in the spectral range.
UR - http://www.scopus.com/inward/record.url?scp=85139109920&partnerID=8YFLogxK
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U2 - 10.1109/NUSOD54938.2022.9894827
DO - 10.1109/NUSOD54938.2022.9894827
M3 - Conference contribution
AN - SCOPUS:85139109920
T3 - Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
SP - 91
EP - 92
BT - 2022 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2022
PB - IEEE Computer Society
T2 - 2022 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2022
Y2 - 12 September 2022 through 16 September 2022
ER -